3 Determine the current flowing I, given that the D1 is a Silicon type diode (Non-anonymous question) * 2 km2 R E₁ = 24 V D₁ D₂ (i) E₂=4V=
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- Chromium has a BCC crystal structure and an atomic radius, R = 0.2149 nm. Determine the linear density and planar density of the [110]. Note: End of the question 110 not the grade. Kindly give me right solution with clear calculations.Calculate the intrinsic carrier density n, for Silicon at I = 292 K. Show all your work and write your answer with 4 significant figures.An n-type piece of silicon experiences anelectric field equal to 0.1 V/μm.(a) Calculate the velocity of electrons andholes in this material.
- If V1 = 22 V, V2 = -7 V, R1 = 1.2 kOhm, R2 = 4.7 kOhm, R3 = 2.4 kOhm, and all diodes are silicon for the circuit below, the output voltage Vo is equal to ___ V. No need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places.A barium titanate crystal has a thickness of 2 mm. Its voltage sensitivity is 12*10-3 Vm/N. It is subjected to a pressure of 0.5 MN/m2. What is the voltage generated ? (Hand written not allowed)Q16. Scientists have tried to commercialize Li metal anode materials in the past without asuccess. Recently, scientists revisited the Li metal anode and achieved a certain level ofimprovement. Please estimate the theoretical capacity of Li metal (LiLi++ e-).A. 3862 Ah/gB. 3862 mAh/gC. 26.8 Ah/gD. 13400 mAh/g
- A piece of crystalline silicon is doped uniformly with phosphorus atoms. The doping density is 1,000,000,000,000,000 atoms per cubic centimeter. Determine the free electron density in this material at 27°C. n = _____ electrons/cm^3 Round your answer to 0 decimal places.8. Indicate which of the following statements are true with regard to semiconductors. (a) elemental semiconductors are made of metalloids (b) semiconductors have a band gap that is greater than 3.5 eV (c) doping a semiconductor with a few ppm of a p block element increases the conductivity of that material by a million fold (d) compound semiconductors must contain at least one metalloid element Group of answer choices A. (b) & (d) B. (a) & (c) C. all four staements are true D. (a), (c) & (d)I need the detailed solution for this questions. (Correction for given values : Dielectric constant : 5.0 Uniform thickness : 0.6d )
- Chromium can be electroplated from aqueous potassium dichromate, with the reduction shown below. If a current of 6.0A and a voltage of 4.5V are used: Cr2O7+(aq) + 14H+(aq) + 12e- -> 2Cr(s) +7H2O a) How many hours would it take to completely convert 215mL of 1.25M K2Cr2O7 to elemental chromium?b) How many kilowatt-hours of electrical energy are required to plate 1.00 g of chromium?The end to end resistance of a connecting bar 10um long, 3 um wide, 1um think, made of various materials. The designer considers: Intrinsic silicon at room temperature. Assume that n_i = n = p = 1.5 * 10 ^10 cm^-3 N-doped silicon with N_D = 5*10^16 per cm^3 N-doped silicon with N_D = 5*10 ^18 per cm^3 P-doped silicon with N_A = 5*10^16 per cm^3 Aluminum with resistivity (p) of 2.8 u Ohms * cm Find the resistance, R, in each case. For intrinsic silicon, u_n = 1350 Cm^2 / V*s and u_p = 480 cm^2 / V*s. For doped silicon, assume u_n = 3u_p = 1200 cm^2 /V*sChoose the correct option 1. The temperature coefficient is a a) device temperature b) rise and fall of a temperture c) conductivity of a device d) raise and fall of conductivity with temperature 2. Electronic and electrical device are a) different in nature, principle,weight and power consumption b) electronics is a subfield of electrical c) work at different voltage level d) all of the above 3. zener diode conduct in a) forward region b) reverse region c) both farward and reverse region d) none of the above 4. Multisim is a simulation software thet has a code for each electrical device it has a) True b) False 5. A solar panel is also the application of a diode a) True b) False 6. Farward biasing causes current which is due to the a) minority carries b) majority carries c) both majority and minority carries d) none of these 7. A diode acts as a linear device up to 0.7 volts a) True b)…