A barium titanate crystal has a thickness of 2 mm. Its voltage sensitivity is 12*10-3  Vm/N. It is subjected to a pressure of 0.5 MN/m2. What is the voltage generated ?

Q: Give one example of where Lattice Vibrations occur in Superconductivity

A: Lattice Vibration Lattice vibration can explain sound velocity, thermal properties, elastic…

Q: In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron…

A:

Q: Q5) (a) Silicon is doped by adding As atoms to a level of 5 x 1015 As atoms/cm³. Calculate: (i) the…

A: The conductivity of semiconductor is lies in between conductor and insulator. The conduction in…

Q: kindly Briefly explain the opacity and translucency in insulators. thank you!

A: The insulators in which light can pass partially, or we can see partial through the insulators, they…

Q: Make a rough estimate of the phase gradient associated with the flow of a 100 A current of…

A: Gradient - Gradient term is generally used for slope, rate of change of quantity, average rate of…

Q: Q3. a) Explain the concept of energy bands in solids. b) Describe the valence band, conduction band,…

A: a. as we know that everything is made up with atoms.

Q: The graph below illustrates the effect of temperature on the conductivity of an extrinsic…

A: 1) semiconductor should be operated in region 2 because for a temperature range it should not vary…

Q: The semiconductors is a materials whose conductivity and resistivity is more than conductors and…

A: False  Option A

Q: 12. If the conductivity of the pure Germanium change with temperature according the fol- lowing…

A: Given data: σ=e-4350T

Q: Discuss briefly and give three (3) examples of each of the following classification of solid…

A: Conductor There is no forbidden energy gap between the valence and conduction bands. The two bands…

Q: A voltage of 8 V is applied over a silicon specimen that is 78 mm in length. The electron mobility…

A:

Q: One of the following statements is correct regarding the photo-diode: Select one: a. The internal…

A: We need to tell that which one of the following statement is correct regarding the photo-diode: a.…

Q: 5. Consider P-type silicon with n, = 100 cm-3 and NA = 4 x 104 cm-3. (a) Find the concentrations of…

A: Given ni = 1010 and NA = 4*1014 then find for electron and hole concentrations for p type material ?…

Q: 1 300° k, if the conductivity is onductivity of 0.1l per ohm per D0 cm2/v-s, and for Silicon

A:

Q: (11) The mobility of free electrons and holes in pure germanium are 3,800 and 1,800 cm2 /V-s,…

A:

Q: From the information given below for N and P type materials, .......... is/are correct. I- .…

A: Statemnet I is correct. N type material has excess free electrons. These are responsible for the…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: Here i have found the concentration of electrons in n type si and concentration of holes in p type…

Q: An impurity such as antimony (Sb) has five electrons in its outer shell. When there are Sb…

A: Antimony has five electrons in its outer shell when there are Sb impurities in Silicon. Four…

Q: doped semiconductor, Please choose one: a. there are only holes b. there are as many electrons as…

A: In this we will write about doped semiconductor...

Q: For copper, the heat capacity at constant volume at 20K id 0.38J/mol∙K and the Debye temperature is…

A: We have given; For copper, the heat capacity at constant volume at 20K id 0.38J/mol∙K Debye…

Q: A good ohmic contact is created on a p-type semiconductor chip by adding which of the following?…

A: The correct option is (c)

Q: Q(a): Find the resistivity of intrinsic silicon using following values - u, = 1350cm2/V.s, H, =…

A: Find the resistivity of the intrinsic silicon  Conductivity = ni e(un +up)  Resistivity…

Q: 3.2 What explains why insulators have different electrical properties from metals?   Band gap…

A: Given:  Brief description: From the above given question it is very clear that we need to know the…

Q: Given two Si samples A and B. Sample A doped with 7.5 ×10'3 boron atoms/cm Sample B doped with 10'6…

A: Due to guidelines we can solve only first three subpart of the question.

Q: A material that has 4valence electrons (A) crystal B conductor insulator D semiconductor

A: VALENCE  ELECTRONS : The electrons in the last orbit which also determines mainly the electrical…

Q: Find the resistivity of (a) intrinsic silicon and (b) n-type silicon with No = 10"/cm and using the…

A:

Q: Diodes would be considered ideal. Which of the following is true? 1. The DI diode is in the plug.…

A: The given circuit is

Q: Explain with the help of band structure diagrams why the following operations can result in the…

A: Ans (a) The conductivity of semiconductors is increased by adding an appropriate amount of suitable…

Q: (1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m/v-s…

A: As per our guidelines we are supposed to answer only one question. Kindly repost other questions as…

Q: Question 7 Extrinsic semiconductors are having charge carriers than intrinsic semiconductor. more O…

A: Intrinsic semiconductor do not contain any impurity. when impurity is added in intrinsic…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: In a doped semiconductor bar, the electron and hole concentrations are not equal. The concentration…

Q: Determine the diffusion constant of electrons and holes of a silicon single crystal at 27oC, if the…

A: It is given that: T=27°C=300Kμn=0.17m2/volt-secμp=0.025m2/volt-seck=1.38×10-23J/°C=Boltzmann's…

Q: The resistance of copper wire with alpha = 0.00393/Co at 20oC is 129 Ω. At 78 oC, its resistance…

A: Given  Copper wire  α=0.00393/°CT1=20° CRT1=129 ΩT2=78° C

Q: In a semiconductor crystal, the atoms are held together by Covalent bonds Forces of attraction lonic…

A: We need to select correct option . It about to semiconductor devices .

Q: A copper bus bar has a rectangular cross-section of dimension 6 in by 8 in Determine the cross-…

A: According to question we have to find the  cross- sectional area in CM.

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: Here i have derived the answer.

Q: The thermal equilibrum concentration of the electron at T=300K in silicon is n0=5*10^4cc. What is…

A: The solution can be achieved as follows.

Q: A silicon crystal having a cross-sectional area of 0.001cm and a length of 10'cm is connected at…

A:

Q: b) Calculate the drift velocity of electrons in silicon at room temperature and when the magnitude…

A: In this question we will find drift velocity of electrons...

Q: Q2) A silicon crystal having a cross-sectional area of 0.001cm- and a length of 10 cm is connected…

A: In this question , we have to find out resistivity and conductivity of silicon crystal..Given values…

Q: (a) pure germanium has (3.6×10²!) atom.cm³, was doped by an indium atom, the impurity is added to…

A: Given :   Density of germanium atom = 3.6 × 10²¹ atoms/ cm³    Doping of impurity atoms [ indium]…

Q: A-How temperature affects the conductivity of conductive metals and how it affects semiconductors.…

A: with change in the temperature, the value of the resistance of the material changes and thus the…

Q: ? Exhibits no energy gap between the valence and conduction Superconductors Insulators Conductors…

A: Energy gap between valency band and conduction band is around 5eV is for insulators   Energy gap…

Q: Calculate the threshold voltage shift if charge density is Qit=1011 cm-2 and the oxide thickness is…

A:

Q: In a semiconductor, an energy gap concept is used to show the difference between …… .. Please choose…

A: Eg = Energy gap .   Eg = EC -EV    EC = conduction energy  band level   EV = valence energy band…

Q: semiconductor is a crystalline material. Please choose one: a. have strong covalent bonds between…

A: In this question we need to choose a correct option

Q: Example (1): In the neighborhood of a certain semiconductor junction, the volume charge density is…

A: In the neighborhood of a certain semiconductor junction, the volume charge density is given by…

Q: Question 3-) Silicon is doped with Np = 4 x 1015 impurity atoms/cm?. Assume the electron and hole…

A: The formula to calculate the resistivity of a material is  σ=qNDμn+nIμp…

Q: liode has a leakage current Is = 64 nA at room temperature (25°). The leakage current if %3D A. No…

A:

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.