-3 The P region of an abrupt junction diode has a resistivity of 0.1 ohm-cm and the N region has a resistivity of 1 ohm-cm. Assume n₁ = 2.5x10¹3 cm³, n = 3600 1700 cm²/V-s. Determine the built-in voltage Vbi- cm²/V-s and up =
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- How is a solid-state diode tested? Explain.Determine the diode current at 20°C for a silicon diode, I S = 0.1 µA at a reverse-bias potential of -10 V.What is the zero-bias junction capacitance/cm2 for a diode with NA = 1018/cm3 on the p-type side and ND = 1020/cm3 on the n-type side? What is the diode capacitance with a 3-V reverse bias if the diode area is 0.05 cm2?
- Sketch the energy band diagram for an ideal p+-n step junction diode showing the carrier activity in and near the depletion region when (a) VA = 0. (b) VA > 0. (c) VA < 0Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?Determine the diode current at 20°C for a silicon diode with n = 2, Is = 0.1 mA at a reverse-bias potential of -10 V?
- We have a junction diode that has iD = 0.2 mA for vD = 0.6 V. Assume that n = 2 and VT = 0.026 V. Use the Shockley equation to compute the diode current at vD = 0.65 V and at vD = 0.70 V.DC-Dc converter (back boost), having resistance 2.2 ohm and 0.6mH inductance. the time of wave is 2.5ms. if the output voltage is 75V and the source voltage is 50V. find 1-peak to peak current 2-minimun inductance required 3-The average diode current 4- Draw the diode current, load current, voltage load, and capacitor current.What is the zero-bias junction capacitance per cm2 for a diode with NA =1018/cm3 on the p-type side and ND = 1015/cm3 on the n-type side. What is the diode capacitance with a 9 V reverse bias if the diode area is 0.02 cm2?
- An abrupt pn junction, a diode, is fabricated using 1017 acceptor atoms cm-3 on the p side and 10^15 donors cm^-3 on the n side of the diode. The geometry of the pnjunction is shown in the figure below.Assume that when the diode is illuminated with light (with photon energy > bandgap energy) 10^21 EHPs are generated per cm^-3 per sec. Also Assume that the electron and hole recombination times are 10 microsec and that Dp =12 cm2/s and Dn = 18 cm2/s . If w =4mm, t = 4mm L1 = 2mm and L2 = 2mm, calculate the resistance of the p side and the n side of the pn junction due to (δn and δp), assume that they act as two resistors in series and determine the current through the pn junction if the reverse bias voltage is 2V. T = 300K.A silicon diode has a reverse saturation current of 50nA at room temperature (25degrees centigrade). If the operating temperature is raised by 50-degrees centigrade, what is now the reverse saturation current?Forward bias current equation given For n=1 and Is= 10pA. Plot the I vs VD Forward bias characteristics of a PN Diode at room temperature by draw a graph and table of the graph. (b)Calculate and find Rd. (full step please, I dont understand to solve it)