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3. A “J309" JFET transistor is to be used as a small signal amplifier as shown below. The circuit is to have Av and a maximum Ips = 8mA with VDD = 20V. Obtain a manufacturer's datasheet for this transistor. From the datasheet, determine maximum values for VDs and Vas, Vas-off (range), Ipss (range), and the minimum a. for the common-source forward transconductance, gfs, (@1kHz). b. Write out the equation for Ay (as a function of Rp, Rs, and grs). C. Write out the equation for Ips (in terms of VpD, RD, and Rs).

3. A “J309" JFET transistor is to be used as a small signal amplifier as shown below. The circuit is to have Av and a maximum Ips = 8mA with VDD = 20V. Obtain a manufacturer's datasheet for this transistor. From the datasheet, determine maximum values for VDs and Vas, Vas-off (range), Ipss (range), and the minimum a. for the common-source forward transconductance, gfs, (@1kHz). b. Write out the equation for Ay (as a function of Rp, Rs, and grs). C. Write out the equation for Ips (in terms of VpD, RD, and Rs).

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3. A “J309" JFET transistor is to be used as a small signal amplifier as shown below. The circuit is to have Ay = 9 and a maximum Ips = 8mA with VDp = 20V. Obtain a manufacturer's datasheet for this transistor. From the datasheet, determine maximum values for Vps and VGs, VGs-off (range), Ipss (range), and the minimum value a. for the common-source forward transconductance, grs, (@1kHz). b. Write out the equation for Av (as a function of Rp, Rs, and grs). C. Write out the equation for Ips (in terms of VDD, Rp, and Rs). d. Solve for RD, Rs using the above equations. е. Using a suitable value for RG, build the circuit in Multisim. Apply a 10mVPK 1OkHz sinewave to the input. f. Using an oscilloscope, measure Vin and Vout and obtain traces of each. What is the measured value of Av? g. What could be done to increase Ay for the circuit? Demonstrate and determine the new value of Ay. Small Signal JFET Amplifier Self-biased Circuit VDD 20V Design Specifications: Av = 9 (gain ratio) Id = 8mA RD C5 Vout Drain Q2 2.2µF C4 Gate J309 Vin 2.2µF Source RG RS
Transcribed Image Text:3. A “J309" JFET transistor is to be used as a small signal amplifier as shown below. The circuit is to have Ay = 9 and a maximum Ips = 8mA with VDp = 20V. Obtain a manufacturer's datasheet for this transistor. From the datasheet, determine maximum values for Vps and VGs, VGs-off (range), Ipss (range), and the minimum value a. for the common-source forward transconductance, grs, (@1kHz). b. Write out the equation for Av (as a function of Rp, Rs, and grs). C. Write out the equation for Ips (in terms of VDD, Rp, and Rs). d. Solve for RD, Rs using the above equations. е. Using a suitable value for RG, build the circuit in Multisim. Apply a 10mVPK 1OkHz sinewave to the input. f. Using an oscilloscope, measure Vin and Vout and obtain traces of each. What is the measured value of Av? g. What could be done to increase Ay for the circuit? Demonstrate and determine the new value of Ay. Small Signal JFET Amplifier Self-biased Circuit VDD 20V Design Specifications: Av = 9 (gain ratio) Id = 8mA RD C5 Vout Drain Q2 2.2µF C4 Gate J309 Vin 2.2µF Source RG RS
MAXIMUM RATINGS J309, J310 Rating Symbol Value Unit ELECTRICAL CHARACTERIS TICS (TA = 25°C unless otherwise noted) Drain -Source Voltage Vps 25 Vdc Characteristic Symbol Min Тур Маx Unit Gate -Source Voltage Ves 25 Vdc OFF CHARACTERISTICS Forward Gate Current IGF 10 mAdc Gate -Source Breakdown Voltage (lG = -1.0 µAdc, Vos = 0) VBRYGSS -25 Vdc - Total Device Dissipation @ TA = 25°C Derate above = 25°C 350 2.8 mW Gate Reverse Current Isss (Ves = -15 Vdc, Vos = 0, TA = 25°C) (Vos = -15 Vdc, Vos = 0, TA = +125°C) -1.0 -1.0 nAdc HAdc Junction Temperature Range TJ -65 to +125 °C Storage Temperature Range Tstg Gate Source Cutoff Voltage Vosiom Vdc -65 to +150 °C (Vos = 10 Vdc, lo = 1.0 nAdc) J309 J310 -1.0 -2.0 -4.0 -6.5 ON CHARACTERISTICS Zero-Gate -Voltage Drain Current(1) (Vos = 10 Vdc, Ves = 0) Ioss mAdc J309 J310 12 24 30 60 Gate-Source Forward Voltage (Vos = 0, le = 1.0 mAdc) Vesin 1.0 Vdc SMALL- SIGNAL CHARACTERISTICS Common-Source Input Conductance Re(ys) mmhos (Vos = 10 Vdc, lo = 10 mAdc, f= 100 MHz) J309 J310 0.7 0.5 Common-Source Output Conductance Re(yos) 0.25 mmhos (Vos = 10 Vdc, lo = 10 mAdc, f= 100 MHz) Common-Gate Power Gain Gog 16 dB - (Vos = 10 Vdc, lo = 10 mAdc, f = 100 MHz) Common-Source Forward Transconductance Re(yts) 12 mmhos (Vos = 10 Vdc, lo = 10 mAdc, f= 100 MHz Common-Gate Input Conductance Re(yig) 12 mmhos (Vos = 10 Vdc, Io = 10 mAdc, 1 = 100 MHz) Common-Source Forward Transconductance 9is umhos (Vos = 10 Vdc, lo = 10 mAdc, f = 1.0 kHz) J309 J310 10000 8000 20000 18000 Common-Source Output Conductance Gos 250 umhos (Vos = 10 Vdc, Io = 10 mAdc, f= 1.0 kHz) Common-Gate Forward Transconductance umhos (Vos = 10 Vdc, lp = 10 mAdc, f = 1.0 kHz) J309 J310 13000 12000 Common-Gate Output Conductance Gog umhos (Vos = 10 Vdc, lo = 10 mAdc, f = 1.0 kHz) J309 J310 100 150 Gate-Drain Capacitance Cad 1.8 2.5 pF (Vos = 0, Vos = -10 Vdc, 1= 1.0 MHz) Gate-Source Capacitance Ces 4.3 5.0 pF (Vos = 0, VGs = -10 Vdc, f= 1.0 MHz) FUNCTIONAL CHARACTERISTICS Equivalent Short-Circuit Input Noise Voltage en 10 nV/ /Hz - (Vos = 10 Vdc, lo = 10 mAdc, f = 100 Hz) 1. Pulse Test: Pulse Width s 300 us, Duty Cycle s 3.0%.
Transcribed Image Text:MAXIMUM RATINGS J309, J310 Rating Symbol Value Unit ELECTRICAL CHARACTERIS TICS (TA = 25°C unless otherwise noted) Drain -Source Voltage Vps 25 Vdc Characteristic Symbol Min Тур Маx Unit Gate -Source Voltage Ves 25 Vdc OFF CHARACTERISTICS Forward Gate Current IGF 10 mAdc Gate -Source Breakdown Voltage (lG = -1.0 µAdc, Vos = 0) VBRYGSS -25 Vdc - Total Device Dissipation @ TA = 25°C Derate above = 25°C 350 2.8 mW Gate Reverse Current Isss (Ves = -15 Vdc, Vos = 0, TA = 25°C) (Vos = -15 Vdc, Vos = 0, TA = +125°C) -1.0 -1.0 nAdc HAdc Junction Temperature Range TJ -65 to +125 °C Storage Temperature Range Tstg Gate Source Cutoff Voltage Vosiom Vdc -65 to +150 °C (Vos = 10 Vdc, lo = 1.0 nAdc) J309 J310 -1.0 -2.0 -4.0 -6.5 ON CHARACTERISTICS Zero-Gate -Voltage Drain Current(1) (Vos = 10 Vdc, Ves = 0) Ioss mAdc J309 J310 12 24 30 60 Gate-Source Forward Voltage (Vos = 0, le = 1.0 mAdc) Vesin 1.0 Vdc SMALL- SIGNAL CHARACTERISTICS Common-Source Input Conductance Re(ys) mmhos (Vos = 10 Vdc, lo = 10 mAdc, f= 100 MHz) J309 J310 0.7 0.5 Common-Source Output Conductance Re(yos) 0.25 mmhos (Vos = 10 Vdc, lo = 10 mAdc, f= 100 MHz) Common-Gate Power Gain Gog 16 dB - (Vos = 10 Vdc, lo = 10 mAdc, f = 100 MHz) Common-Source Forward Transconductance Re(yts) 12 mmhos (Vos = 10 Vdc, lo = 10 mAdc, f= 100 MHz Common-Gate Input Conductance Re(yig) 12 mmhos (Vos = 10 Vdc, Io = 10 mAdc, 1 = 100 MHz) Common-Source Forward Transconductance 9is umhos (Vos = 10 Vdc, lo = 10 mAdc, f = 1.0 kHz) J309 J310 10000 8000 20000 18000 Common-Source Output Conductance Gos 250 umhos (Vos = 10 Vdc, Io = 10 mAdc, f= 1.0 kHz) Common-Gate Forward Transconductance umhos (Vos = 10 Vdc, lp = 10 mAdc, f = 1.0 kHz) J309 J310 13000 12000 Common-Gate Output Conductance Gog umhos (Vos = 10 Vdc, lo = 10 mAdc, f = 1.0 kHz) J309 J310 100 150 Gate-Drain Capacitance Cad 1.8 2.5 pF (Vos = 0, Vos = -10 Vdc, 1= 1.0 MHz) Gate-Source Capacitance Ces 4.3 5.0 pF (Vos = 0, VGs = -10 Vdc, f= 1.0 MHz) FUNCTIONAL CHARACTERISTICS Equivalent Short-Circuit Input Noise Voltage en 10 nV/ /Hz - (Vos = 10 Vdc, lo = 10 mAdc, f = 100 Hz) 1. Pulse Test: Pulse Width s 300 us, Duty Cycle s 3.0%.
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