4. A sample of intrinsic GaN is illuminated with a 10 mW/cm² beam of light at the blue edge of what people can see, λ = 300 nm. The electron lifetime is 2 ps. The electron mobility for intrinsic GaN is about 400 cm²/V's and hole mobility is about 100 cm²/V.s. (GaN intrinsic carrier density is 1.9 x 10-10 cm³) a. What is the number of photons arriving at the semiconductor surface per sec? (Recall energy = power × time.) b. Verify that photons of this energy can be absorbed. c. Assuming energy photon is absorbed and creates an electron-hole pair, and assuming the GaN sample is 1 mm thick, what is the optical generation rate? d. What are the equilibrium electron and hole densities (in the dark)? e. What are the excess carrier concentrations when the light is on? f. What are the recombination rates for electrons and for holes when the light is off? When the light is on? g. What are the steady-state carrier densities n and p? h. How much does the conductivity of this sample change compared with its dark value? i. Suppose the power level is kept the same, but the wavelength of the light is shifted to the red edge of human vision (λ = 700 nm). What is the generation rate now?

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
Question

a,b,c,d,and e only needed

4. A sample of intrinsic GaN is illuminated with a 10 mW/cm² beam of light at
the blue edge of what people can see, λ = 300 nm. The electron lifetime is 2
ps. The electron mobility for intrinsic GaN is about 400 cm²/V's and hole
mobility is about 100 cm²/V.s.
(GaN intrinsic carrier density is 1.9 × 10-10 cm³)
What is the number of photons arriving at the semiconductor surface per
sec? (Recall energy = power x time.)
b. Verify that photons of this energy can be absorbed.
Assuming energy photon is absorbed and creates an electron-hole pair,
and assuming the GaN sample is 1 mm thick, what is the optical
generation rate?
d. What are the equilibrium electron and hole densities (in the dark)?
e.
What are the excess carrier concentrations when the light is on?
f. What are the recombination rates for electrons and for holes when the
light is off? When the light is on?
What are the steady-state carrier densities n and p?
h. How much does the conductivity of this sample change compared with
its dark value?
i.
Suppose the power level is kept the same, but the wavelength of the light
is shifted to the red edge of human vision (λ = 700 nm). What is the
generation rate now?
Transcribed Image Text:4. A sample of intrinsic GaN is illuminated with a 10 mW/cm² beam of light at the blue edge of what people can see, λ = 300 nm. The electron lifetime is 2 ps. The electron mobility for intrinsic GaN is about 400 cm²/V's and hole mobility is about 100 cm²/V.s. (GaN intrinsic carrier density is 1.9 × 10-10 cm³) What is the number of photons arriving at the semiconductor surface per sec? (Recall energy = power x time.) b. Verify that photons of this energy can be absorbed. Assuming energy photon is absorbed and creates an electron-hole pair, and assuming the GaN sample is 1 mm thick, what is the optical generation rate? d. What are the equilibrium electron and hole densities (in the dark)? e. What are the excess carrier concentrations when the light is on? f. What are the recombination rates for electrons and for holes when the light is off? When the light is on? What are the steady-state carrier densities n and p? h. How much does the conductivity of this sample change compared with its dark value? i. Suppose the power level is kept the same, but the wavelength of the light is shifted to the red edge of human vision (λ = 700 nm). What is the generation rate now?
Expert Solution
steps

Step by step

Solved in 5 steps with 16 images

Blurred answer
Knowledge Booster
Photoelectric
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,