4. a. Using the approxXimate characteristics for the Si diode, D. ID VR circuit of Fig. 2.154. b. Perform the same analysis as part (a) using the ideal model for the diode. c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions? + VD Ip Si + E 30 V R 1.5 k VR FIG. 2.154 Problem 4.

Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
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4. a. Using the approximate characteristics for the Si diode, determine VD, Ip, and VR for the
circuit of Fig. 2.154.
b. Perform the same analysis as part (a) using the ideal model for the diode.
c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good
approximation for the actual response under some conditions?
+ VD
Si
E
30 V
1.5 k VR
FIG. 2.154
Problem 4.
Transcribed Image Text:4. a. Using the approximate characteristics for the Si diode, determine VD, Ip, and VR for the circuit of Fig. 2.154. b. Perform the same analysis as part (a) using the ideal model for the diode. c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions? + VD Si E 30 V 1.5 k VR FIG. 2.154 Problem 4.
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