A sample of silicon have electron concentration 3.2x10^11 m^-3 and L=86 mm, t=10 mm and w=35 mm, when sample is tested by Hall effect, the value of resistance 2.7 K ohm and the Hall coefficient=3.6 m^3/c, is obtained. 1. Which kind of semiconductor that the sample? 2. Determine the value of mobility for the sample in (1).
A sample of silicon have electron concentration 3.2x10^11 m^-3 and L=86 mm, t=10 mm and w=35 mm, when sample is tested by Hall effect, the value of resistance 2.7 K ohm and the Hall coefficient=3.6 m^3/c, is obtained. 1. Which kind of semiconductor that the sample? 2. Determine the value of mobility for the sample in (1).
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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A sample of silicon have electron concentration 3.2x10^11 m^-3 and L=86 mm, t=10 mm and w=35 mm, when sample is tested by Hall effect, the value of resistance 2.7 K ohm and the Hall coefficient=3.6 m^3/c, is obtained. 1. Which kind of semiconductor that the sample? 2. Determine the value of mobility for the sample in (1).
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