4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si photoresist 0.5 um
4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si photoresist 0.5 um
Understanding Motor Controls
4th Edition
ISBN:9781337798686
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter17: Temperature Sensing Devices
Section: Chapter Questions
Problem 14RQ: Assume that a silicon diode is being used as a temperature detector. If its temperature increases,...
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