40HA (Your Roll number) -> Ie Ie: 1imA

Q: Describe in your own words why Ig is effectively 0A for a JFET transistor

A: here given why Ig is 0 for a JFET  transsitor

Q: 2K blue IK R R Sr wr

A: We should the find the value of voltage across resistor ,VR.

Q: What is VCESAT for the transistor as shown  ifβF = 40 and βR = 1? (b) If βF = 60, βR = 2, andthe 25-…

A: Given βf = 60, βR = 1, IC = 1 mA, IB = 25 µA Calculating reverse base current gain

Q: Find the minimum Vin required to put the transistor in saturation. Find Vout. Β = 100.

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Q: R 1.5 kN R +Vec 15 V Boc 100 E %3D Va8 4.0 VE BB The largest base resistor that will still saturate…

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Q: 500 k Ohm 1- Find the VCE and IB. 2- What is the Ic value that will saturate the transistor? (You…

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Q: 10. The Si transistor has negligible leakage current and B= 100. If Vcc= 15V, VEE= 4V, RE= 3.3k2 and…

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Q: The collector current is 3.08 mA when the base current is 26 mA. What is the alpha of the…

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Q: Vcc R4 R3 R1 R2 Figure (4) Q4:- Design the circuit shown in figure (4) to set the Q-point of the two…

A: From given details we will find out value of resistances .

Q: a. IB. b. Ic. For the emitter-bias network , determine: +20 V • 2 ΚΩ 430 ΚΩ Vi 10 με 10 με H β = 50…

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Q: For circuit shown in Fig 1.96 calculate R, R, R R and 1= V/V, Transistor parameters are as follows :…

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Q: 3.3kQ

A: The current mirror is a stabilizer circuit by which we can make the input current independent of the…

Q: b läi 5 A transistor has IB = 105 µA and IC = 2.05 mA. Find (a) B of the transistor (b) a of the…

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Q: Suppose that a certain npn transistor has VBE=0.7 V for IE = 10 mA. Compute VBE for IE = 1 mA.…

A: Given:

Q: The transistor in the circuit is silicon and the leakage current value is 20nA. By what percentage…

A: According to question: The collector emitter voltage 'VCE' at room temperature of 24 degree Celsius…

Q: (a) An NPN transistor circuit shown in Figure 3 with the following value: R1=33 kN, R2 = 15 k2, Rc =…

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Q: A certain transistor has a PD(max) of 1 W at 25°C. The derating factor is 5 mW/°C. What is the…

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Q: esign (Z, = 2 kn), (Z, = 1.8 kn). Assume that the transistor is silicon with, (B = 80) (r. = %3D =…

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Q: For the circuit shown below, Assume that |VBE of a conducting transistor is approximately 0.7V and…

A: Given: The given figure is,

Q: Q-1: Analyze the circuit of the figure shown to determine the voltages at all nodes and the currents…

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Q: What is the βDC of a transistor if IC 20.3 mA and IE 20.5 mA? Choices are: 200

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Q: A 60 W power transistor is to be cooled by attaching it to a heat sink. Calculate the maximum…

A: Thermal resistance = (temperature difference)/ power loss. Use above formula to find maximum thermal…

Q: For a transistor having RC= 100 OHM, RB-10K ohm, RE- 5K ohm, VBB-10 volt, VcC- 20 volt. Solve for…

A: beta value is missing. I am taking beta value as 100. So you can follow the same procedure and…

Q: An NPN transistor with ICBO=0.5µA ,ICEO=45 µA and collector current 2mA.  Calculate the value of α,…

A: Right Answer option D. 0.989

Q: 2.5 V For the transistors in the circuit shown: k = 4 mA/V² k2 = 2 mA/V? VTH1 = VTH2 = -0.5 V T1 T2…

A: First we will find out the current for second MOSFET then we will find out the current and voltage…

Q: In the circuit shown, measurement indicates VB to be +1V and Ve to be +1.7V. What are a O +1OV and ß…

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Q: (iv) Determine the difference in the drain voltages if the resistance RD associated with transistor…

A: Given circuit: Here, μn=450 cm2/V.sW=600 μmL=350 μmεox=3.45×10-11 F/mtox=30 nmVDD=VSS=15 VRD=4…

Q: RD Vg = 0 V Rs RG

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Q: transistor uses

A: A unipolar transistor uses the orientation to the one pole.

Q: = 105 µA and 5 A transistor has IB IC = 2.05 mA. Find (a) B of the transistor (b) a of the…

A: We are authorized to answer three subparts at a time, since you have not mentioned which part you…

Q: B=200 transistors used in the circuit according to; Ve3=5V and Ic2= 1.5 mA calculate the value of…

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Q: A transistor has IB = 105 µA and IC = %3D 2.05 mA. Find (a) B of the transistor (b) a of the…

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Q: For the common base circuit shown, determine IC and VCB. Assume the transistor to be of silicon. RE…

A: It is given that: RE=1.5 kΩ RC=1.2 kΩ VEE=8 VVCE=18 V

Q: Q1: For the circuit shown in figure (1), B=50 for the two transistors. Find the D.C. values of IEI,…

A: By dc analysis we will find out the current t

Q: A transistor has IB = 105 µA and IC = 2.05 mA. Find (a) B of the transistor (b) a of the transistor…

A: So according to the question  Ib =105 uA  Ic = 2.05 mA  We need to find emitter current also beta of…

Q: 500 k Ohm 4k Ohm 1kOhm

A: As you give that Ie=Ic so Ib=0.

Q: An NPN transistor with ICBO=0.5µA ,ICEO=45 µA and collector current 2mA.  Calculate the value of…

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Q: For each case given below, determine the operating region of the transistor in the circuit given in…

A: The condition to operate transistor in the cut-off region is IB=0 IC=0 Vbe<0.7 V The condition…

Q: A transistor has a B of 150 and a base current, I, of 20 µA. The collector current, la, equals to O…

A: A transistor has Beta of 150s Bae current Ib = 20 µA

Q: In the simplified transistor circuit given below, V= 51 mV. Calculate the voltage vo. 1 k2 ww 4001 +…

A: First we will apply KVL in the left loop, we will find current I. But voltage Vo is -400I * 5000…

Q: (c) A 60 W power transistor is to be cooled by attaching it to a heat sink. Calculate the maximum…

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Q: An NPN transistor with ICBO=0.5µA ,ICEO=45 µA and collector current 2mA.  Calculate the value of α,…

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Q: A given transistor has the following values: hFE = 200, hfe 120, hie= 5 ks2, hre = 40, = and hoe =…

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Q: Ver Vor 10 V Van 10 V

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Q: etermine the region of operation for a transistor whose characteristics are those of Fig. 3.8 if…

A: Given Data: ICmax = 6 mA VCBmax=15 V  PCmax= 30 mW.

Q: A transistor has Ib = 105 µA and IC = 2.05 mA. Find (a) β of transistor…

A: We are authorized to answer three subparts at a time, since you have not mentioned which part you…

Q: ic RE-I k2 Re-2 k2 R2 R 10 k2 Icc 15 V a) 3.36kohm b) 3,75kohm c) 4.17kohm d) 4.73kohm e) 4.37kohm

A: Transistors are current-controlled electronics switch which can work in Active, Saturation and Cut…

Q: The maximum power dissipation capacity of a transistor is 50 mW. If the collector emitter voltage is…

A: Given: A transistor has,  Maximum power dissipation capacity, Pdmax=50 mW. Collector emitter…

Q: Determine whether or not the transistor in is in saturation. Assume VCE(sat) = 0.2 V. Rc 1.0 kN RB…

A: Assuming the transistor to be in saturation, the value of the saturation collector current will be…

Photoconductive Cell

Photoconductive cells are light-sensitive resistors in which resistance is inversely proportionated to light intensity when illuminated. These devices consist of a thin single-crystal or polycrystalline film of composite semiconductor materials. Cadmium sulfide (CdS) is used to make the most commercially available photoconductive particles which are sensitive to light in the visible spectrum. Other less commonly used substances respond to infrared light, but not to the visible spectrum. Such substances are lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe), and so on.