5.1 A 0.18-µum fabrication process is specified to have t = 4 nm, μ, = 450 cm²/V-s, and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Ds of 1 k2 at VGS = 1V. Ans. 388 μA/V; 0.93 μm

5.1 A 0.18-µum fabrication process is specified to have t = 4 nm, μ, = 450 cm²/V-s, and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Ds of 1 k2 at VGS = 1V. Ans. 388 μA/V; 0.93 μm

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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