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58. A diode that has a negative resistance characteristic is the a. Tunnel diode b. Laser diode c. Schottky diode d. Hot-carrier diode 59. A silicon diode has a saturation current of 5 nA at room temperature. What is the saturation current at 100°C? а. 905 nА b. 8.4 nА c. 9.04 mA d. None of the above 60. How many protons does the nucleus of a silicon atom contain? а. 4 b. 14 C. 29 d. 32 _ 61. Silicon atoms combine into an orderly pattern called a. Covalent bond b. Сrystal c. Semiconductor d. Valence orbit _ 62. The amount of time between the creation of a hole and its disappearance is called a. Doping b. Lifetime c. Recombination d. Valence _ 63. Using 2nd approximation, calculate the load current of the circuit given below a. 9.3 mA b. 10 mA c. 0.93 A d. Both a and c 64. When the graph of current versus voltage is a straight line, the device is referred to as a. Active b. Linear c. Nonlinear d. Passive

58. A diode that has a negative resistance characteristic is the a. Tunnel diode b. Laser diode c. Schottky diode d. Hot-carrier diode 59. A silicon diode has a saturation current of 5 nA at room temperature. What is the saturation current at 100°C? а. 905 nА b. 8.4 nА c. 9.04 mA d. None of the above 60. How many protons does the nucleus of a silicon atom contain? а. 4 b. 14 C. 29 d. 32 _ 61. Silicon atoms combine into an orderly pattern called a. Covalent bond b. Сrystal c. Semiconductor d. Valence orbit _ 62. The amount of time between the creation of a hole and its disappearance is called a. Doping b. Lifetime c. Recombination d. Valence _ 63. Using 2nd approximation, calculate the load current of the circuit given below a. 9.3 mA b. 10 mA c. 0.93 A d. Both a and c 64. When the graph of current versus voltage is a straight line, the device is referred to as a. Active b. Linear c. Nonlinear d. Passive

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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58. A diode that has a negative resistance characteristic is the a. Tunnel diode b. Laser diode c. Schottky diode d. Hot-carrier diode 59. A silicon diode has a saturation current of 5 nA at room temperature. What is the saturation current at 100°C? а. 905 nА b. 8.4 nA c. 9.04 mA d. None of the above 60. How many protons does the nucleus of a silicon atom contain? а. 4 b. 14 с. 29 d. 32 61. Silicon atoms combine into an orderly pattern called a. Covalent bond b. Сrystal c. Semiconductor d. Valence orbit 62. The amount of time between the creation of a hole and its disappearance is called a. Doping b. Lifetime c. Recombination d. Valence 63. Using 2nd approximation, calculate the load current of the circuit given below 10 V а. 9.3 mA b. 10 mA с. 0.93 А d. Both a and c 64. When the graph of current versus voltage is a straight line, the device is referred to as a. Active b. Linear c. Nonlinear d. Passive
Transcribed Image Text:58. A diode that has a negative resistance characteristic is the a. Tunnel diode b. Laser diode c. Schottky diode d. Hot-carrier diode 59. A silicon diode has a saturation current of 5 nA at room temperature. What is the saturation current at 100°C? а. 905 nА b. 8.4 nA c. 9.04 mA d. None of the above 60. How many protons does the nucleus of a silicon atom contain? а. 4 b. 14 с. 29 d. 32 61. Silicon atoms combine into an orderly pattern called a. Covalent bond b. Сrystal c. Semiconductor d. Valence orbit 62. The amount of time between the creation of a hole and its disappearance is called a. Doping b. Lifetime c. Recombination d. Valence 63. Using 2nd approximation, calculate the load current of the circuit given below 10 V а. 9.3 mA b. 10 mA с. 0.93 А d. Both a and c 64. When the graph of current versus voltage is a straight line, the device is referred to as a. Active b. Linear c. Nonlinear d. Passive
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