6. A diode is operated at room temperature with IS =10-¹0 A and n=2. i) What is the diode current lo, if the voltage across the diode is VD=0.65 V ? ii) What voltage VĎ is required for a diode current of 200 μA. Determine 1₁, 12 and 13 for the circuit shown in the following figure. Si 3.7K ww |↓4₁ +2V 13Ge 4.3K ww T₂

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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Subject: Electronics Engineering Solve no 6
1. Zener and Avalanche breakdown
2. Define PIV of a Diode.
3. Determine the dc resistance of a diode at VD =-20V if its reverse
saturation current is 1uA (The VT=25 mv at room temperature)
4. Give at least two examples of semiconductor materials which are used
for LED.
5. Develop the basic Diode equation. Using the same find the percentage
increase in reverse saturation current of a PN junction diode if the
temperature is increased from 25°C to 50°C.
6. A diode is operated at room temperature with IS =10-¹0 A and n=2.
i)What is the diode current ID, if the voltage across the diode is
VD=0.65 V ? ii)What voltage VĎ is required for a diode current of 200
μΑ.
Determine 1₁, 12 and 13 for the circuit shown in the following figure.
Si
3.7K
www
13 Ge
||₁₁|
+2V
4.3K
www
T₂
7.
A silicon diode having 200 internal resistance is used as half wave rectifier. If the
applied input voltage is 50 sin100πt and load resistance is 800 Q2, then find
a) Im, Idc and Irms
b) Output frequency and ripple factor
c) AC input and output power
d) efficiency
8.
9. Differentiate zener and avalanche breakdown.
10.Draw and explain the V-I characteristics of silicon diode.
11.Design a voltage regulator using zener diode to meet the following
specification; Unregulated voltage=20V, Vo=10V, load current is 0-
20mA, 12min=10mA, 12max=100mA
12. What do you mean by break region of a diode?
What is Avalnche break down?
13.
Explain the operation of P-N junction diode with V-I characteristics.
14.
Transcribed Image Text:1. Zener and Avalanche breakdown 2. Define PIV of a Diode. 3. Determine the dc resistance of a diode at VD =-20V if its reverse saturation current is 1uA (The VT=25 mv at room temperature) 4. Give at least two examples of semiconductor materials which are used for LED. 5. Develop the basic Diode equation. Using the same find the percentage increase in reverse saturation current of a PN junction diode if the temperature is increased from 25°C to 50°C. 6. A diode is operated at room temperature with IS =10-¹0 A and n=2. i)What is the diode current ID, if the voltage across the diode is VD=0.65 V ? ii)What voltage VĎ is required for a diode current of 200 μΑ. Determine 1₁, 12 and 13 for the circuit shown in the following figure. Si 3.7K www 13 Ge ||₁₁| +2V 4.3K www T₂ 7. A silicon diode having 200 internal resistance is used as half wave rectifier. If the applied input voltage is 50 sin100πt and load resistance is 800 Q2, then find a) Im, Idc and Irms b) Output frequency and ripple factor c) AC input and output power d) efficiency 8. 9. Differentiate zener and avalanche breakdown. 10.Draw and explain the V-I characteristics of silicon diode. 11.Design a voltage regulator using zener diode to meet the following specification; Unregulated voltage=20V, Vo=10V, load current is 0- 20mA, 12min=10mA, 12max=100mA 12. What do you mean by break region of a diode? What is Avalnche break down? 13. Explain the operation of P-N junction diode with V-I characteristics. 14.
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