6.10 The three-phase full-bridge inverter in Figure 6.6a has a Y-connected load and each phase consists of R = 4, L = 10mH, and C = 25 μF. The inverter frequency is fo = 60 Hz and the dc input voltage, V = 220V. Determine the rms, average, and peak currents of the transistors. C + 0 81 AD D3 Q KDs bob AD AD KD (a) Circuit

{1OB/s 4.ll Asiacell Untitled docu... -> Q/ Derive mathematical expression to determine the stability factors of voltage-divider bias circuit?

Q6) d) Show by means of a diagram how you will normally connect external batteries ini. PNP transistorii. NPN transistore) Describe how a semiconductor will behave at absolute zero temperature.

6-If the collector resistance is shorted,the ac output voltage will a-Decrease. b-Increase. c-Remain the same. 9 d-Equal zero. 7-If input impedance of the second stage decreases, the voltage gain of the first stage will a-Decrease. b-Increase. c-Remain the same. d-Equal zero. 8-If the load resistance of second stage opens, the voltage gain of the first stage will a-Decrease. b-Increase. c-Remain the same. d-Equal zero. 9-The feedback resistor a-Increases voltage gain. b-Reduces distortion. c-Increases collector resistance. d-Decreases input impedance. 10-when the emitter resistance Rp doubles the ac emitter resistance a-Increases. b-decreases. c-Remains the same. d-Cannot be determined. 11-To reduce the distortion in a CE amplifier, reduce the a-DC emitter current. b-Base-emitter voltage. c-Collector current. d-AC base voltage. 12-The output voltage of a CE amplifier is a-Amplified. b-Inverted. c-180° out of phase with the input. d-All of the above.

Thanks for the help This is about the integrated fabrication process for microelectronic devices for a bipolar n-p-n transistor; . Please work out the fabrication process flow. In each step of fabrication process, please illustrate the cross-section of the structure and indicate the material of each layer, the patterning of each layer and the process used.

Q6:A) A transistor dissipates 50W in an ambient temperature of 60°C.The thermal resistance are exc-0.5 the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction exceeding 170°C. °CW¹,0a-4°CW.Determine 5% single polver supply

Find analytically the load line equation for the single-transistor amplifier circuit as shown in the figure. Draw your equation using the Math tool, with superscript and subscript.. Single line text.

The term cut-off for a transistor refers to a. the transistor is at its operating point b. no current flow from emitter to collector c. maximum current flow from emitter to collector d. there is no base current

6.8. In a single-phase mid-point converter, turns ratio from primary to each secondary is 1.25. The source voltage is 230 V, 50 Hz. For a resistive load of R = 2 2, determine (a) maximum value of average output voltage and load current and the corresponding firing and conduction angles, (b) maximum average and rms thyristor currents, (c) maximum possible values of positive and negative voltages across SCRs, (d) the value of a for load voltage of 100 V, (e) the value of voltage across SCR at the instant of commutation for a of part (d). Hint. (b) Maximum average thyristor current =; So 2n 0 [Ans. (a) 165.63 V, V. m R sin o d(at) etc. 82.82 A, a=0°, y= 180° (b) 41.41 A, 65.054 A (c) 520.4 V. 520.4 V (d) 52,862° (e) 414.82 V]

5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.