(a) Bipolar Junction Transistor (BJT) has three modes of operating region which are cut- off region, active region, and saturation region. Figure Q2(a) shows a BJT circuit. (i) Briefly describe the characteristics and parameters of BJT during saturation region. (ii) Classify whether the BJT in Figure Q2(a) is saturated or not. Use VcE(sa)= 0.3V and BDc = 50. Rc 470 N RB Vcc 24 V 8 V 4.7 kN VBB 4 V Figure Q2(a) : BJT circuit (b) Refer to the circuit in Figure Q2(b), determine the collector current (Ic), base current (Is), emitter current (IE), base to emitter voltage (VBE), collector to emitter voltage (VcE) and collector to base voltage (VCB). Given Boc= 50. %3D

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(a)
Bipolar Junction Transistor (BJT) has three modes of operating region which are cut-
off region, active region, and saturation region. Figure Q2(a) shows a BJT circuit.
(i)
Briefly describe the characteristics and parameters of BJT during saturation
region.
(ii)
Classify whether the BJT in Figure Q2(a) is saturated or not. Use VcE(sat)= 0.3V
and BDc = 50.
Rc
470 N
RB
8 V
Vcc
24 V
4.7 kN
VBB
4 V
Figure Q2(a) : BJT circuit
(b)
Refer to the circuit in Figure Q2(b), determine the collector current (Ic), base current
(IB), emitter current (Ie), base to emitter voltage (VBE), collector to emitter voltage (VcE)
and collector to base voltage (VcB). Given BDc= 50.
Transcribed Image Text:(a) Bipolar Junction Transistor (BJT) has three modes of operating region which are cut- off region, active region, and saturation region. Figure Q2(a) shows a BJT circuit. (i) Briefly describe the characteristics and parameters of BJT during saturation region. (ii) Classify whether the BJT in Figure Q2(a) is saturated or not. Use VcE(sat)= 0.3V and BDc = 50. Rc 470 N RB 8 V Vcc 24 V 4.7 kN VBB 4 V Figure Q2(a) : BJT circuit (b) Refer to the circuit in Figure Q2(b), determine the collector current (Ic), base current (IB), emitter current (Ie), base to emitter voltage (VBE), collector to emitter voltage (VcE) and collector to base voltage (VcB). Given BDc= 50.
+Vcc
오 12 V
2.2k 2.
Rc
RB
VCE
240k Q
Figure Q2(b) : BJT bias circuit
(c)
Figure Q2(c) shows a voltage divider biased circuit for Bipolar Junction Transistor
(BJT). Given ßDc= 200.
(i)
Determine whether the BJT is in stiff condition or not.
(ii)
By referring to Q2(c)(i) use appropriate method to calculate the collector current
(Ic) and collector to emitter voltage (VcE).
+20V
+20V
RB
50kn.
Rc
2kN
RE
RB2
10kN.
5600
Figure Q2(c) : Voltage divider circuit
Transcribed Image Text:+Vcc 오 12 V 2.2k 2. Rc RB VCE 240k Q Figure Q2(b) : BJT bias circuit (c) Figure Q2(c) shows a voltage divider biased circuit for Bipolar Junction Transistor (BJT). Given ßDc= 200. (i) Determine whether the BJT is in stiff condition or not. (ii) By referring to Q2(c)(i) use appropriate method to calculate the collector current (Ic) and collector to emitter voltage (VcE). +20V +20V RB 50kn. Rc 2kN RE RB2 10kN. 5600 Figure Q2(c) : Voltage divider circuit
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