A CdS cell (R1 in the shown circuit) has a dark resistance of 100 kn and resistance in a light beam of 20 kn. The cell time constant is 72 ms. The circuit is designed to get VD= 8 V within 12 ms of the beam interruption. If Vs=13 V, answer the following questions: Vs R1 VD R2 Find the value of R2 Find the value of R2 Oa. 53.65 ka Ob. 49.65 ka Oc. 55.65 kn Od. 51.65 ko What time will be taken for VD to reach 7 V when the light beam strikes the cell (assuming the cell was in the dark for a long time). Oa. 83.9 ms Ob. 85.9 ms Oc, 87.9 ms Od. 89.9 ms

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A CdS cell (R1 in the shown circuit) has a dark resistance of 100 kn and resistance in a light
beam of 20 kn. The cell time constant is 72 ms. The circuit is designed to get VD= 8 V
within 12 ms of the beam interruption. If Vs=13 V, answer the following questions:
Vs
R1
VD
R2
Find the value of R2
Find the value of R2
Oa. 53.65 ka
Ob. 49.65 kn
Oc. 55.65 kn
"Od. 51.65 kn
What time will be taken for VD to reach 7 V when the light beam strikes the cell (assuming
the cell was in the dark for a long time).
Oa. 83.9 ms
Ob. 85.9 ms
Oc. 87.9 ms
Od. 89.9 ms
Transcribed Image Text:3 A CdS cell (R1 in the shown circuit) has a dark resistance of 100 kn and resistance in a light beam of 20 kn. The cell time constant is 72 ms. The circuit is designed to get VD= 8 V within 12 ms of the beam interruption. If Vs=13 V, answer the following questions: Vs R1 VD R2 Find the value of R2 Find the value of R2 Oa. 53.65 ka Ob. 49.65 kn Oc. 55.65 kn "Od. 51.65 kn What time will be taken for VD to reach 7 V when the light beam strikes the cell (assuming the cell was in the dark for a long time). Oa. 83.9 ms Ob. 85.9 ms Oc. 87.9 ms Od. 89.9 ms
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