2II. PN junction, Forward bias and reverse bias. Consider a pn junction with across-sectional area A = 0.001 cm? with the following parameters:N, = 101 cm3Tn = 0.1usHo = 200cm²/V-sHn -700Ng = 1015Tp = 10 µsHo = 1300Hp -450%3D%3DTake kT/q at room temp is 25.9 mV.n 1.5 x 1010/cm³. Einstein relation, D/µ =kT/q, and the Diffusion Length, L= (Dt)/2, n = P,n, = n,Pp.Diode Current is I = qA[DpPn/Lp + Dnnp/L [exp qV/kT - 1]= lo [exp qV/kT - 1](ii) The junction is reversed biased by-0.5V. What is the current?(i)The junction is forward biased by 0.5 V. What is the forward current?

According to question: The reverse saturation current 'Io' is calculated as

II. PN junction, Forward bias and reverse bias. Consider a pn junction with a cross-sectional area A = 0.001 cm? with the following parameters: N, = 1017 cm3 Ng = 1015 Tp = 10 µs %3D 0.1us 200cm2/V-s Hp = Hn -700 Ho = 1300 Hp 450 Take kT/q at room temp is 25.9 mV.n 1.5 x 1010/cm. Einstein relation, D/µ =

II. PN junction, Forward bias and reverse bias. Consider a pn junction with a cross-sectional area A = 0.001 cm? with the following parameters: N, = 1017 cm3 Ng = 1015 Tp = 10 µs %3D 0.1us 200cm2/V-s Hp = Hn -700 Ho = 1300 Hp 450 Take kT/q at room temp is 25.9 mV.n 1.5 x 1010/cm. Einstein relation, D/µ =

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A pn Junction is fabricated on top of a Si substrate. At 300 K, the donor and acceptor doping densities are ND= 3x1018/cm3 and NA=2.5x1015/cm3. If the pn junction is in unbiased condition, then what will be the thickness of the depletion region?
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