a) Design (Find the values of W/L for NMOS and PMOS) a reference CMOS inverter to achieve a delay of 250ps when driving a 0.2pF load using 3.3V power supply. Assume K'n= 100 µA/V², K'p= 40 µA/V², VTN=-VTP= 0.75 V. Find the rise and fall times, Tp, TPHL and TPLH for the logic gate and compar them with results from simulation and plot transient response. b) Verify your design in part(a) using PSPICE or Multisim package. PULSE SOURCE DESCRIPTION (VS) Mp Initial voltage Peak voltage Delay time Rise time Vo VDD 3.3 V 3.3 V lie MN c0.2 pF 50 ps 50 ps V, Fall time Pulse width 2.95 ns Pulse period 6 ns ts tr TPLH, TPHL, TP Calculated Simulated % Difference

a) Design (Find the values of W/L for NMOS and PMOS) a reference CMOS inverter to achieve a delay of 250ps when driving a 0.2pF load using 3.3V power supply. Assume K'n= 100 µA/V², K'p= 40 µA/V², VTN=-VTP= 0.75 V. Find the rise and fall times, Tp, TPHL and TPLH for the logic gate and compar them with results from simulation and plot transient response. b) Verify your design in part(a) using PSPICE or Multisim package. PULSE SOURCE DESCRIPTION (VS) Mp Initial voltage Peak voltage Delay time Rise time Vo VDD 3.3 V 3.3 V lie MN c0.2 pF 50 ps 50 ps V, Fall time Pulse width 2.95 ns Pulse period 6 ns ts tr TPLH, TPHL, TP Calculated Simulated % Difference

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Design an asymmetrical inverter to meet the delay specification a symmetrical CMOS reference inverter to provide a propagation delay of 400 ps fora load capacitance of 200 fF. Use VDD =2.5 V, VTN =0.60 V, and VTP =−0.60 V.with (W/L)P = (W/L)N .
(a) What is the power-delay product for a symmetrical CMOS inverterwith (W/L)N =2/1, (W/L)P =5/1, C =0.25 pF,VDD =3.3 V, VTN =0.75 V, and VTP =−0.75 V? (b) Estimate the maximum switchingfrequency for this inverter. (c) Howmuch powerdoes the inverter dissipate if it is switching at thefrequency found in (b)?
(a)VDD = 3.3 V, VTN = 0.75 V, and VTP = −0.75 V.Calculate the voltage at which vO = vI for a CMOS inverter with Kn = Kp. (b) VDD = 2.5 V, VTN = 0.60 V, and VTP = −0.50 V. What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1?
1.Design a reference CMOS inverter with following design specifications:VDD = 2.5V, VTN = 0.6V, VTp = -0.6V, Kn’ = 100X10^-6 A/V2,Kp’ = 40X10^-6 A/V2, C = 0.2pF,tp = 250pS.
Find the ratio of hole mobility to electron mobility of a CMOS inverter given that the beta ratio of pull-up network to pulldown network is 1.5 (Assume that W/L ratio of pMOS is 3 times greater than that of nMOS and all other parameters are same for both) Assuming the supply voltage to be 3V draw a suitable DC transfer characteristic curve of the CMOS inverter.
1. An NMOS inverter must drive a load capacitance of 100 fF while drawing a supply current of less than 1 mA when the output is low. What is the fastest risetime that the circuit can achieve? Assume the output low level is nearly zero. 2. In a CMOS inverter, (W/L)1 = 2/0.18 and (W/L)2 = 3/0.18. Determine the trip point of the circuit and the supply current drawn at this point.
A CMOS inverter shown in Figure below, with kn = 10, k, = 100 JA/V?, and V, = 0.5V having a sinusoidal signal source with Thevenin equivalent voltage of 0.075V as peak amplitude and resistance of 150k. Determine the signal values at node A with V = +1.5V. (a) 6.82m V (b) 8.62mV (c) 6.80m V (d) 8.80mV
What are the noise margins for a symmetrical CMOS inverter operating with VDD = 3.3 V and VTN = −VTP = 0.75 V? (b) Repeat for a CMOS inverter having (W/L)N = (W/L)P operating with VDD = 3.3 V and VTN = −VTP = 0.75 V.
Design a reference inverter to achieve a delay of 250 ps when driving a 0.2-pF load using a 3.3-V power supply. Assume that the threshold voltages of the CMOS technology are VTN = −VTP = 0.75 V.what W/L ratios are required to actually achieve an average propagation delay of 250 ps?
(a)VDD = 1.8 V, VTN = 0.45 V and VTP = −0.45 V. .Calculate the voltage at which vO = vI for a CMOS inverter with Kn = Kp. (b)VDD = 2.5 V, VTN = 0.75 V and VTP = −0.65 V. What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1? (c)VDD = 2.5 V, VTN = 0.65 V and VTP = −0.75 V.What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1?
Plot a graph of the voltage transfer characteristicfor an ideal inverter with V+ = 2.5 V, V− = 0 V, andVREF = 0.8 V. Assume VH = V+ and VL = V−.
What are the noise margins of a minimum size CMOS inverter in which both W/L ratios are 2/1 and VDD = 2.5 V and VTN = −VTP = 0.6 V?