A long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5×1010 cm3, Na =1016 cm³, Nd =2×10!5 cm³, Dp= 10 cm³/s, Dn=25 cm²/s, TH0 = 5x10-7 s, Tp0=10-7 s, ɛr=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=1021 cm3 s'l exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.759 mA O 0.975 mA O 0.597 mA O 0.579 mA O

A long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5×1010 cm3, Na =1016 cm³, Nd =2×10!5 cm³, Dp= 10 cm³/s, Dn=25 cm²/s, TH0 = 5x10-7 s, Tp0=10-7 s, ɛr=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=1021 cm3 s'l exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.759 mA O 0.975 mA O 0.597 mA O 0.579 mA O

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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