In a very hıgh quality komo-junction p L D made ofa direct band gap semiconductor, the internally generated power is 6.13 aW with the internally emitted photoons of wavelength 2-06 m. If the radiative recombination lifetime is 13 as and the nonnadiative is 2398.The device electron current will be: O a. 2.564e-6 A O b. 1.631e-5 A Oc. 9.808e-5 A d. 3.862e-4 A O e. 3.249e-5 A

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: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-4 J.s
Si
Ge
Ga As
9.11 x 10-31 Kg
E, (eV)
n, (cm-)
Hn (em /V-s)
Hy (em?/V - s)
N (cm )
N. (em )
m/m.
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 10
1.8 x 10
1.602 x 10-19 C
8.85 x 10-12 F/m
1500
3900
8500
Eo
450
1900
400
1.05 x 104J-s
2.78 x 109 1.04 x 1019 4.45 x 107
K
8.6 x 10-5 eV/K
9.84 x 1018
6x 1018
7.72 x 1018
KT/q
26 mV (T= 300 K)
26 meV (T = 300 K)
0.082
0.98
0.067
KT
m/m
G (F/m)
0.28
0,49
0.45
3 x 10 m/s
11.7
16
13.1
Nair = 1
NGAAS = 3.66
Some useful relations
EgAL, Ga-4n(r) = 1.424 +1.247.r
Egin.Ga-1A(x) = 0.36+ 1.064r
1eV = 1.602 x 10-19 J
1 KG = 1x 10 Wb/cm?
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-4 J.s Si Ge Ga As 9.11 x 10-31 Kg E, (eV) n, (cm-) Hn (em /V-s) Hy (em?/V - s) N (cm ) N. (em ) m/m. 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 10 1.8 x 10 1.602 x 10-19 C 8.85 x 10-12 F/m 1500 3900 8500 Eo 450 1900 400 1.05 x 104J-s 2.78 x 109 1.04 x 1019 4.45 x 107 K 8.6 x 10-5 eV/K 9.84 x 1018 6x 1018 7.72 x 1018 KT/q 26 mV (T= 300 K) 26 meV (T = 300 K) 0.082 0.98 0.067 KT m/m G (F/m) 0.28 0,49 0.45 3 x 10 m/s 11.7 16 13.1 Nair = 1 NGAAS = 3.66 Some useful relations EgAL, Ga-4n(r) = 1.424 +1.247.r Egin.Ga-1A(x) = 0.36+ 1.064r 1eV = 1.602 x 10-19 J 1 KG = 1x 10 Wb/cm?
In a very high quality homo-junction pa LED made of a direct band gap semiconductor, the innternally
generated power is 6.13 aW with the internally emitted photons of wavelength A-06m. If the radiative
recombination lifetime is 13 s and the nonradiative is 335.The device electron current will be:
O a. 2.564e-6 A
O b. 1.631e-5 A
O c. 9.808e-5 A
O d. 3.862e-4 A
O e. 3.249e-5 A
Transcribed Image Text:In a very high quality homo-junction pa LED made of a direct band gap semiconductor, the innternally generated power is 6.13 aW with the internally emitted photons of wavelength A-06m. If the radiative recombination lifetime is 13 s and the nonradiative is 335.The device electron current will be: O a. 2.564e-6 A O b. 1.631e-5 A O c. 9.808e-5 A O d. 3.862e-4 A O e. 3.249e-5 A
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