A semiconductor material has been doped with Donor and Acceptor; if ND
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- Find the type and electron and hole concentrations in a silicon sample at a temperature of 400 K if it is doped with a boron concentration of 1016/cm3 and a phosphorus concentration of 2×1015/cm3.1) In the context of semiconductors, describe the following:(a) Intrinsic and extrinsic semiconductor. (b) Drift velocity of carriers.(c) Band-gap energy.(d) Frequency of light emitted by an LED.Find the type and electron and hole concentrations in a silicon sample at room temperature if it is doped with a boron concentration of 1016/cm3 and a phosphorus concentration of 2×1015/cm3.
- A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with a test current, IZ, of 31 mA. What is the voltage across the zener terminals when the current is 15 mA? When the current is 55 mA? Make the representation of the values by means of their curve characteristic.An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?For a specially designing on junction diode, the value of the forward current is 35 mA at a forward voltage of 3 V. If the eta of the material of the diode is 1.5, then estimate the reverse saturation current.
- Given the circuit below, calculate the required Rs and the maximum power for the Zener diode. Rs(ohms), Pzm(Watts)Sketch graphs of the Fermi energy versus donor impurity concentration and versus temperature.A current density of 5000 A/cm2 exists in a 0.02 Ω · cm n-type silicon sample. What is the electric field needed to support this drift current density?
- Using battery modeled diodes, design the following limiters Transfer functions given in Fig. 3 while assuming Vi is a variable voltage sourceThe diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)Determine Pz max for the Zener diode in the network to maintain Vl at 12v for a load variation Il from 0mA to 200mA