A silicon pn junction at T=300k with zero applied bias has dopingconcentrations of Nj=5x1016 cm-3 and NA=5x1015and |Emaxl. Assume n=1.5x1010 cm, Es=11.9.cm3. Determine xn, Xp, W-3

To calculate the total width of the depletion region first of all we should calculate the built in…

Answered: A silicon pn junction at T=300k with…

A silicon pn junction at T=300k with zero applied bias has doping concentrations of Na=5x1016 cm 3 and NA=5x1015 cm-3. Determine xn, Xp, W and |Emax|. Assume n=1.5x1010 cm3, ɛs=11.9.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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A silicon pn junction at T=300k with zero applied bias has doping
concentrations of Nj=5x1016 cm-3 and NA=5x1015
and |Emaxl. Assume n=1.5x1010 cm, Es=11.9.
cm3. Determine xn, Xp, W
-3

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