A silicon pn junction at T=300k is reverse-biased at VR= 8 volt. The doping concentration are NA=5x1016 cm-3 and ND=5x1015 cm-3. Determine Determine xn, xp, w and |Emax|. Assume ni=1.5x1010 cm-3, εsi=11.9.

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A silicon pn junction at T=300k is reverse-biased at VR= 8 volt. The doping concentration are NA=5x1016 cm-3 and ND=5x1015 cm-3. Determine Determine xn, xp, w and |Emax|. Assume ni=1.5x1010 cm-3, εsi=11.9.

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