A silicon wafer with thickness of 925 µm is being heated with a uniform heat flux at the lower surface. The silicon wafer has a thermal conductivity that varies with temperature and can be expressed as k(T) = (a + bT + cT2) W/m·K, where a = 450, b = -1.29, and c = 0.00111. To avoid warping, the temperature difference across the wafer thickness cannot exceed 2°C. If the upper surface of the silicon wafer
A silicon wafer with thickness of 925 µm is being heated with a uniform heat flux at the lower surface. The silicon wafer has a thermal conductivity that varies with temperature and can be expressed as k(T) = (a + bT + cT2) W/m·K, where a = 450, b = -1.29, and c = 0.00111. To avoid warping, the temperature difference across the wafer thickness cannot exceed 2°C. If the upper surface of the silicon wafer
Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
8th Edition
ISBN:9781305387102
Author:Kreith, Frank; Manglik, Raj M.
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Chapter7: Forced Convection Inside Tubes And Ducts
Section: Chapter Questions
Problem 7.17P: Determine the rate of heat transfer per meter length to a light oil flowing through a 2.5-cm-ID,...
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A silicon wafer with thickness of 925 µm is being heated with a uniform heat flux at the lower surface. The silicon wafer has a thermal conductivity that varies with temperature and can be expressed as k(T) = (a + bT + cT2) W/m·K, where a = 450, b = -1.29, and c = 0.00111. To avoid warping, the temperature difference across the wafer thickness cannot exceed 2°C. If the upper surface of the silicon wafer is at a uniform temperature of 600 K, determine the maximum allowable heat flux. (Round your answer up to 2 decimal places.)
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