A temperature-stable resistor is made by connecting a resistor made of silicon in series with one made of iron. If the required total resistance is 1300 Q in a wide temperature range around 20°C, what should be the resistance of the (a) silicon resistor and (b) iron resistor? (See the table below.) Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N m) Temperature Coefficient of Resistivity, a (K-) Material Typical Metals Silver 1.62 x 10-8 4.1 x 10- Copper Gold Aluminum 1.69 x 10-8 4.3 x 10-3 2.35 x 10 4.0 x 10- 2,75 x 10-8 4.4 x 10- Manganin Tungsten Iron 4.82 x 10 8 0.002 x 10- 4.5 x 10- 5.25 x 10- 9.68 x 10-8 6.5 x 10- 3,9 x 10 Platinum 10.6 X 10* Typical Semiconductors 2.5 x 10 Silicon, pure -70 x 10-3 Silicon, n-type" Silicon, p-type 8.7 x 104 2.8 x 10- Typical Insulators 101 104 Glass Fused quartz ~10% "An alloy specifically designed to have a small value of a. "Pure silicon doped with phosphorus impurities to a charge carrier density of 10" m Pure silcon doped with aluminum impurities to a charge carrier density of 10" m. (a) Number i Units (b) Number Units
A temperature-stable resistor is made by connecting a resistor made of silicon in series with one made of iron. If the required total resistance is 1300 Q in a wide temperature range around 20°C, what should be the resistance of the (a) silicon resistor and (b) iron resistor? (See the table below.) Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N m) Temperature Coefficient of Resistivity, a (K-) Material Typical Metals Silver 1.62 x 10-8 4.1 x 10- Copper Gold Aluminum 1.69 x 10-8 4.3 x 10-3 2.35 x 10 4.0 x 10- 2,75 x 10-8 4.4 x 10- Manganin Tungsten Iron 4.82 x 10 8 0.002 x 10- 4.5 x 10- 5.25 x 10- 9.68 x 10-8 6.5 x 10- 3,9 x 10 Platinum 10.6 X 10* Typical Semiconductors 2.5 x 10 Silicon, pure -70 x 10-3 Silicon, n-type" Silicon, p-type 8.7 x 104 2.8 x 10- Typical Insulators 101 104 Glass Fused quartz ~10% "An alloy specifically designed to have a small value of a. "Pure silicon doped with phosphorus impurities to a charge carrier density of 10" m Pure silcon doped with aluminum impurities to a charge carrier density of 10" m. (a) Number i Units (b) Number Units
Physics for Scientists and Engineers: Foundations and Connections
1st Edition
ISBN:9781133939146
Author:Katz, Debora M.
Publisher:Katz, Debora M.
Chapter28: Current And Resistance
Section: Chapter Questions
Problem 68PQ
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