a. Determine the branch currents of each of the given circuit below. -SV ID ww 本 Si ' 10 Ω ' 2.2 ΚΩ - Si 20 V 4/1/+ • 20 Ω b. Determine the output voltage, V, and the diode current, ID of each circuit shown below. +8V 1.2 ΚΩ - 10 V ID V 4.7 ΚΩ Si Si Si +10 V ' 10 Ω 1.2 ΚΩ Si ID 4.7 ΚΩ -2 V V₂
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- he input to a voltage regulator circuit varies from 11.4 to 12.2 V. The load voltageis to be maintained at 9.1V with maximum current of 95 mA. a) Which of the following zener diode can be used? Diode A: 9.1 V, 1 W; Diode B: 9.1 V, 2 W; Diode C: 9.1 V, 3 W; Diode D: 9.1 V, 5 W b) List all standard resistance values that can be used.1. The collector-base voltage of a Si transistor is a. None of these b. zero c. 0.7 volts d. 0.3 volts 2. The current gain of a common-emitter transistor is the ratio of the a. base current to collector current b. collector current to emitter current c. collector current to base current d. Emitter current to collector current 3. A zener diode shunt regulator uses the zener connected a. in series with the load b. in series with RS c. across RS d. across the load 4. If the transistor is to operate in the saturation region, the base-emitter and the base-collector terminal has to bea. both forward-biased b. both reversed-biased c. reversed-biased and forward-biased respectively d. forward-biased and reversed-biased respectively 5. The base-emitter of the transistor operating in the active region is usually a. operating in the breakdown region b. reverse-biased c. forward-biased d. non-conducting2. A certain zener diode has a maximum power rating of 300 mW at 40 deg Cand a derating factor of 1.4mW/deg C. Determine the maximum power the zener can dissipate at a temperature of 80 deg C. 3. From the datasheet, a 1N4728A zener diode has a ZZ of 10 0. The datasheet gives VZ = 3.3 V at a test current, IZ, of 76 mA. What is the voltage across the zener terminals when the current is 90 mA? When the current is 45 mA?
- A two-zone DC chopper with a DC input voltage of 200 V and a switching frequency of 20 kHz The energy of a 2 mH inductance with 100 A passing through it is transferred to the DC source. are transferred. Ignoring circuit losses, for λ = 2/5 a) Calculate the transmission times of the transistor and diode with the period. b) Find the amount of increase and decrease of inductance current in a period. c) Calculate the amount of energy transferred from the inductance in the first period. d) Find out in how many periods and in how many ms all the energy is transferred1. Complete the sentence: Based from Bell Telephone Laboratories, transistor is an abbreviated combination of words _____________ and _______________. A) Transconductance and Varistor B) Transonic and Varistor C) Transmit and Resistor D) Transmit and Varistor2. Complete the sentence: The arrow in the schematic symbol of a transistor points/signifies the ___________________. On the other hand, ____________ flow always against the arrow, just like in the junction diode. A) Direction of the hole flow (voltage), electron B) Direction of the hole flow (voltage), proton C) Direction of hole flow (current), electron D) Direction of hole flow (current), proton3. What is the voltage applied to the emitter–base junction of a BJT? It is the voltage required in order to make the base conduct a specified current. A) Output voltage B) Junction forward voltage C) Junction voltage D) Transistor forward voltageA shunt regulator employs a zener diode for which VZ = 10.1 V at IZ = 10 mA while VZ = 10.2 Vat IZ = 20 mA. The available supply voltage (VS) is 15.0 V, R = 300 ohm, and the load resistance(RL) =1.0 kohma) Find VZ0 and rz.b) Calculate the output voltage (VO).c) Determine the line regulation (ΔVO/ΔVS).d) Using the line regulation obtained in (c), determine the values of the output voltage (VO) if thesupply voltage (VS) is increased from 15 V to 15.1 V.
- 8. For the emitter-stabilized bias circuit of Fig. 4.122 , determine:a. IBQ.b. ICQ.c. VCEQ.Using IC that is approximately equal to IE. Determine the value of emitter voltage VE, when VCC=17V, R4=1441 ohms, R3=242 ohms, VC=9 V and R2=5256ohm R5=303 ohmApply each of diode approximations given the following parameters D`:rB= 2 ohms, rR= 220 kilohms: Si, rB = 5 ohms, rR= 560 kilo ohms Determine the current flowing through D1, D2 AND R2, R3, THE VOLTAGE ACROSS R3 SOLVE IN THREE DIODE APRROXIMATIONS
- Determine the range of input voltage required for the circuit shown below to regulate the output voltage to 6V. RL = 2.2 kilo ohms, RS = 100 ohms and IZM = 32 mA.Attached please find plot of my question regarding Mosfet Transistor. For a Enhancement type MOSFET, it is given as VGS(TH)=VT=3V, k= 0.4x10^−3, rd= 40kΩ. a)Calculate the output voltage (Voutput) for the case where the input voltage is 0.8mV (Vinput = 0.8mV)Follow the instructions below using the parameters below. 0.6um technology. Any size transistor (W or L) must be divisible by 0.3um to be produced by any company. Always set the sizes of W and L assuming the smallest L possible for each transistor according to the technology. Include units VDD = 3V: VT0P = 0.7V; VTON = 0.5V; unCox = 99uA / V ^ 2 upCox = 33uA / V ^ 2; gamma = 0.1 sqrt (V); 2ΦF = 0.6V Design a bit of a static RAM memory when the capacitance of Q, CQ = 5fF and the capacitance of the line bit is 1pF. a. Draw your schematic identify each node and list the transistors. b. Draw the sense amplifier circuit and the precharge-equalizer, if the user wants to precharge the line to VDD. c. The access transistors in a RAM memory bit have a size (W / L) a = 6um / 0.6um Determines the minimum size of the NMOS transistors in the inverters. Justify the size you are choosing for each transistor