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An experiment was run in a semiconductor fabrication plant in an effort to increase yield. Five factors, each at two levels, were studied. The factors (and levels) were A = aperture setting (small, large), B = exposure time (20% below nominal, 20% above nominal), C = development time (30 s, 45 s), D = mask dimension (small, large), and E = etch time (14.5 min, 15.5 min). The unreplicated 2° design shown below was run. (1) = 7 d = 8 e = 8 de = a = 9 ad 10 de = 12 ade 10 b = 34 bd = 32 be = 35 bde = 30 ab = 55 abd = 50 abe = 52 abde = 53 c = 16 cd = 18 се — 15 cde = 15 ac = 20 acd 21 ace = 22 acde = 20 bc = 40 bcd = 44 bce = 45 bcde = 41 abc = 60 abcd = 61 abce = 65 abcde = 63 (a) Construct a normal probability plot of the effect estimates. Which effects appear to be large? (b) Conduct an analysis of variance to confirm your findings for part (a). Hint: Conduct analysis of variance with the large effects found in (a), and draw conclusion. (c) Write down the fitted regression model relating yield to the significant process variables. (d) Interpret any significant interactions. Hint: Construct interaction plot. (e) What are your recommendations regarding process operating conditions?

An experiment was run in a semiconductor fabrication plant in an effort to increase yield. Five factors, each at two levels, were studied. The factors (and levels) were A = aperture setting (small, large), B = exposure time (20% below nominal, 20% above nominal), C = development time (30 s, 45 s), D = mask dimension (small, large), and E = etch time (14.5 min, 15.5 min). The unreplicated 2° design shown below was run. (1) = 7 d = 8 e = 8 de = a = 9 ad 10 de = 12 ade 10 b = 34 bd = 32 be = 35 bde = 30 ab = 55 abd = 50 abe = 52 abde = 53 c = 16 cd = 18 се — 15 cde = 15 ac = 20 acd 21 ace = 22 acde = 20 bc = 40 bcd = 44 bce = 45 bcde = 41 abc = 60 abcd = 61 abce = 65 abcde = 63 (a) Construct a normal probability plot of the effect estimates. Which effects appear to be large? (b) Conduct an analysis of variance to confirm your findings for part (a). Hint: Conduct analysis of variance with the large effects found in (a), and draw conclusion. (c) Write down the fitted regression model relating yield to the significant process variables. (d) Interpret any significant interactions. Hint: Construct interaction plot. (e) What are your recommendations regarding process operating conditions?

Linear Algebra: A Modern Introduction
Linear Algebra: A Modern Introduction
4th Edition
ISBN:9781285463247
Author:David Poole
Publisher:David Poole
Chapter2: Systems Of Linear Equations
Section2.4: Applications
Problem 28EQ
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An experiment was run in a semiconductor fabrication plant in an effort to increase yield. Five factors, each at two levels, were studied. The factors (and levels) were A = aperture setting (small, large), B = exposure time (20% below nominal, 20% above nominal), C = development time (30 s, 45 s), D = mask dimension (small, large), and E = etch time (14.5 min, 15.5 min). The unreplicated 2° design shown below was run. (1) = 7 d = 8 e = 8 de = a = 9 ad 10 de = 12 ade 10 b = 34 bd = 32 be = 35 bde = 30 ab = 55 abd = 50 abe = 52 abde = 53 c = 16 cd = 18 се — 15 cde = 15 ac = 20 acd 21 ace = 22 acde = 20 bc = 40 bcd = 44 bce = 45 bcde = 41 abc = 60 abcd = 61 abce = 65 abcde = 63 (a) Construct a normal probability plot of the effect estimates. Which effects appear to be large? (b) Conduct an analysis of variance to confirm your findings for part (a). Hint: Conduct analysis of variance with the large effects found in (a), and draw conclusion. (c) Write down the fitted regression model relating yield to the significant process variables. (d) Interpret any significant interactions. Hint: Construct interaction plot. (e) What are your recommendations regarding process operating conditions?
Transcribed Image Text:An experiment was run in a semiconductor fabrication plant in an effort to increase yield. Five factors, each at two levels, were studied. The factors (and levels) were A = aperture setting (small, large), B = exposure time (20% below nominal, 20% above nominal), C = development time (30 s, 45 s), D = mask dimension (small, large), and E = etch time (14.5 min, 15.5 min). The unreplicated 2° design shown below was run. (1) = 7 d = 8 e = 8 de = a = 9 ad 10 de = 12 ade 10 b = 34 bd = 32 be = 35 bde = 30 ab = 55 abd = 50 abe = 52 abde = 53 c = 16 cd = 18 се — 15 cde = 15 ac = 20 acd 21 ace = 22 acde = 20 bc = 40 bcd = 44 bce = 45 bcde = 41 abc = 60 abcd = 61 abce = 65 abcde = 63 (a) Construct a normal probability plot of the effect estimates. Which effects appear to be large? (b) Conduct an analysis of variance to confirm your findings for part (a). Hint: Conduct analysis of variance with the large effects found in (a), and draw conclusion. (c) Write down the fitted regression model relating yield to the significant process variables. (d) Interpret any significant interactions. Hint: Construct interaction plot. (e) What are your recommendations regarding process operating conditions?
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