An InGaAsP semiconductor laser operating at a wavelength of 1.3 x10-6m has a cavity (formed by its interfaces with the air) of length 300 x10-6m. Assume normal incidence of the beam on the semiconductor faces. The refractive index (n) of the InGaAsP compound is 3.9 and its absorption coefficient is alpha=10cm-1. If a film is deposited on one side of the laser to produce 90% reflectance, what is the minimum gain for laser emission? . NOTE: The refractive index of air = 1 and the Reflectance for normal incidence: R=((n1-n2)/(n1+n2))2

An InGaAsP semiconductor laser operating at a wavelength of 1.3 x10-6m has a cavity (formed by its interfaces with the air) of length 300 x10-6m. Assume normal incidence of the beam on the semiconductor faces. The refractive index (n) of the InGaAsP compound is 3.9 and its absorption coefficient is alpha=10cm-1. If a film is deposited on one side of the laser to produce 90% reflectance, what is the minimum gain for laser emission? . NOTE: The refractive index of air = 1 and the Reflectance for normal incidence: R=((n1-n2)/(n1+n2))2

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 20P

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