An n-type semiconductor is known to have an electron concentration of 7.2 x 10^17 m^3. If the electron drift velocity is 270 m/s in an electric field of 850 V/m, .calculate the conductivity of this material 8.66 V/m O 55.7 m/s O 0.42 0.m O 0.036 (Q.m)^-1 O

An n-type semiconductor is known to have an electron concentration of 7.2 x 10^17 m^3. If the electron drift velocity is 270 m/s in an electric field of 850 V/m, .calculate the conductivity of this material 8.66 V/m O 55.7 m/s O 0.42 0.m O 0.036 (Q.m)^-1 O

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Related questions

Q: Determine the Fourier series, in complex-exponential form, of the waveform shown.

Q: For the network below, determine fLD.

A: Given

Q: 1506.2 V ; 52 AJ (Elect. Engg. Banaras Hindu Univ. 1977) 13. In a 110-V compound generator, the…

A: The solution is given below

Q: Amplifier voltage gain: 23 dB, input voltage: 12 mV, speaker impedance: 5 Ohms What is the output…

A: Decible values will be converted to normal values by using log values Use the standard conversion…

Q: Once the following circuit has reached steady state, what is the current through the inductor, IL1,…

Q: Band 1 Color Band 2 Color Band 3 Color Band 4 Color Resistor Value 680 kſN, 5% 10 kN, 10% 100 kſN,…

A: given resistors value.we have to calculate color code.

Q: Using the components listed below, design an amplifier having a voltage gain of −10 ± 20 percent.…

A: Amplifier: It is an electronic device that is used to amplify the current, voltage, or power. This…

Q: Find the fourier transform of the following signal. (а) е «tu(-t) at. (b) t"e-atu(t) (c) ejwot

A: Given c) y(t) = ejwot

Q: V. V3 I, R,= 1.2 kn 1 R3 3.3k2 R= 2.2 kRŽ Vz 1sv 10V Ez

Q: 5. Determine the bus admittance matrix [Ybus] of the representative power system shown in Figure 5.…

A: In the power system, the Bus Admittance Matrix represents the approval of various buses. With the…

Q: I.Using Nodal analysis solve for 1 12 13 14 II.Using Thevenin's Theorem solve for 11 12 I13 14 5+j5…

Q: 15 For the R-C-coupled amplifier below determine IC1. Show solution in your bond paper. +20 V 2.2 kQ…

A: We need to find out current for given circuit

Q: Course Name & Code: Signals & Systems (CNET-221) 3. Consider an LTI system with impulse response…

A: We need to find out the convolution of given signal

Q: 8. What is the minimum conductor ampacity, overload protection, and dual-element fuse rating for a…

A: Given information: The full load current of the motor according to the nameplate is 115 A.

Q: Q2: For the cct shown ih figure. Ioss =6MA, rd = lookn , Vass-lv and up= -4v. i. Find a suitable…

Q: Design a 3X8 decoder.

A: A decoder is a combinational circuit that converts coded input signal to original signal as output.…

Q: Q3/A/ Find the trigonometric Fourier series

A: Even signal-When any signal is mirror image/symmetrical to y axis or vertical axis then that signal…

Q: A single-phase transformer of turn ratio (1:2), R1-0.5 N, X-1.8 n, R2-0.2 N, X2-0.5 2. The no-load…

Q: Q1 (a) Convert the following quantity in Table 1(a) into engineering and scientific notation. Table…

A: Conversion of following quantities in engineering notations and scientific notation. 36200 W…

Q: Find poyinting vector

Q: 1. Determine Vo I, for the networks below.

Q: fourier transform (DTFT)

A: Delta Function- It is also known as the unit impulse function. It's value is equal to zero…

Q: An industrial plant has an average load of 2,000KW at 0.6 lagging power factor. A synchronous motor…

A: Find the individual active and reactive power of load and that from source . Then obtain the…

Q: (a) Figure 2(a) and Figure 2(b) respectively show the input waveform and clipper circuit…

A: In this question, We need to draw the output voltage waveform of the given circuit? Assume forward…

Q: 8.79 Use loop analysis to find V, in the network in Fig. P8.79. 10 6/0 v -j1n Vy V. 4/0 A

Q: Given these points K( 4, 7, -4) and P( 9, -70° , 3 ), solve for (a) vector from K to the origin and…

A: The solution is given below

Q: Given these points K( 4, 7, -4) and P( 9, -70° , 3 ), solve for (a) vector from K to the origin and…

Q: 1. (x- c)2 + (y – c2)? = 1 Ans: (y")?- [Cy)² + 1]3 = 0 %3D

Q: Problem 3: Calculate the 12 V determinant and the + node voltages in circuit shown on figure the 21…

Q: 7 In the circuit shown, determine the voltage across resistor R1. R2 2K D1 D2 R1 5V 2K

Q: Measurements in a particular area yielded the following t-octave band pressure levels: 2 Center…

A: Loudness level: It is measured by comparing the loudness of the sound and a pure tone of a…

Q: There are three logic gates. Logic gate A draws 3.6μA when the output is HIGH and 2μA when the…

A: Given: There are three logic gates. Logic gate A draws 3.6 μA when the output is HIGH and 2 μA when…

Q: A three phase inverter which is used to control the speed of a conveyer with a 3phase induction…

Q: Problem 1: Calculate the (+) determinant and the 30 V node voltages in the V2 circuit shown on…

Q: Given the information appearing in Fig. 4.74, determine: (a) Ic. (b) Rc. (c) Rg. (d) VCE- 12 V Ic RC…

Q: 11 In the circuit shown, determine the circulating current. D1 R1 5V 1K

Q: EE 2 (Electrical circuits 2) Directions: Solve the following problems completely. Enclose your final…

A: The solution is given below

Q: 3. A 40 mH inductor is supplied from a 110 V source with a frequency of 60 Hz. Calculate the…

Q: Calculate the fraction of time a spacecraft spends in daylight given a celestial body with a radius…

A: Given a spacecraft And a Celestial body with radius R = 5709 km Altitude h = 686 km Alpha = 0…

Q: How do we know current flows in source terminal? Is this common for n-type mosfet? What is an n-type…

A: How do we know current flows in source terminal? Is this common for n-type mosfet? What is an n-type…

Q: Use superposition to calculate the voltage Vo, if Is = 35, R = 18 and Vs = 32. %3D R Iş Vs

Q: Q1. X The gate can be metal or Polysilicon The mos cap has the following parameter Gate Case A:…

Q: X(s)=(((1)/(56)))/(s)+((-(1)/(56)s-(1)/(56))/(s^(2)+s+5.6)) find the inverse laplase

A: given X(s)=156s +-156 s-156s2+s+5.6

Q: For the network below, determine fip Show the details of your work. Write your solution on a white…

A: Since MOSFET amplifier has bandpass response. It shows a high pass response at a lower frequency…

Q: Your Answers may be presented through Discussions, Drawings/Figures/Diagrams, Reference to NEC/PEC…

Q: 1.Methods of generating SSB (include the block diagram) Filter method Phase shift method Weaver…

A: 1. NOTE- As per the rules we can answer only 3 sub-parts, please post the remaining sub-parts as the…

Q: What is the symbol for the magnetic field strength?

A: H - is the symbol for magnetic field strength

Q: Determine the value of RS required to self-bias a p-channel JFET with IDSS = 25 mA, VGS (off) = 15 V…

Q: 30 Ω 40 Ω 20 Ω 10 Ω 80 N 60 N 50 Q bo Figure Q2(c)

Q: 1 (a) Convert the following quantity in Table 1(a) into engineering and scient notation. Table 1(a)…

A: Engineering notation is the notation in which a large or small number will be converted into a…

Question

i need the answer quickly

An n-type semiconductor is known to
have an electron concentration of 7.2 x
10^17 m^3. If the electron drift velocity is
270 m/s in an electric field of 850 V/m,
.calculate the conductivity of this material
8.66 V/m O
55.7 m/s O
0.42 Q.m O
0.036 (Q.m)^-1 O

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 2 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

The electron number density in a semiconductor varies from 1020 m-3 to 1012 m-3 linearly over a distance of 4 μ Determine the electron diffusion current and electric field at the midpoint if no current flows, μе = 0.135 m2V-1s-1 and T = 300 K.
The ability to move holes in a semiconductor at T = 300 K is 500 cm? / V is the voltage given as 26mV. what is the diffusion constant of the holes accordingly
We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies linearly from 10E20 cm^-3 to 0 from left to right. If the mobility of the electrons is 500 cm^2/V.s, what is the current density if the electric fields are negligible?
Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.
Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?
Draw band diagrams for below contacts. a) metal-n-type semiconductor for Φm< Φs b) metal-n-type semiconductor for Φm> Φs c) metal-p-type semiconductor for Φm< Φs d) metal-p-type semiconductor for Φm> Φs Clearly specify type of contact, Schottky barrier, built-in-potential and the depletion width in the band diagram
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
A group IV semiconductor has an intrinsic carrier concentration of 2.4×10^13 ??−3 at 300 K.a. Given its electron and hole mobilities, calculate its intrinsic electrical conductivity which are 3900 ??^2/?? and 1900 ??^2/?? respectively.
There is a p-type semiconductor box. As the voltage at both ends of the box continued to increase, the drift velocity of the holes in the box reached the saturation velocity. After that, if the acceptor doping concentration in this semiconductor box is doubled and the voltage is also doubled, how will the current change in this semiconductor box change? However, it is assumed that the mobility is affected only by impurity scattering. .
An n-type semiconductor with direct band structure (Eg = 2.5 eV) is applied with a DC voltage shown below. (i) Schematically draw the band diagram for this semiconductor under this DC voltage. (ii) Calculate the longest wavelength in light absorption from this n-type semiconductor with applied DC voltage.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
In a n-type semiconductor, the electron concentration increases linearly along the x-axis from 10^16 cm^-3 at x=0 (point A) to 5x10^20 cm^-3 at x=0.5cm (point B). In the absence of any external applied electric field, estimate the approximate diffusion current density and its direction (A to B or B to A). Assume that the electron diffusion constant, Dn = 10cm^2/s.