The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material A = 1 um?, electron mobility Hn = 1312.75 cm² /V s, and hole mobility Hp = 463.33 cm2 /V s. Find the total current (to one decimal place) flowing through the material. T = 300K, q = 1.6 x 10-19 C, k = 8.62 x 10-5 eV/K, k = 1.38 x 10-23 J/K, and 1 eV = 1.6 x 10-19 C. 6 x 1017/cm3 3 x 1017/cm3 Electrons Holes x = 0 x = 4 µm

The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material A = 1 um?, electron mobility Hn = 1312.75 cm² /V s, and hole mobility Hp = 463.33 cm2 /V s. Find the total current (to one decimal place) flowing through the material. T = 300K, q = 1.6 x 10-19 C, k = 8.62 x 10-5 eV/K, k = 1.38 x 10-23 J/K, and 1 eV = 1.6 x 10-19 C. 6 x 1017/cm3 3 x 1017/cm3 Electrons Holes x = 0 x = 4 µm

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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