At the temperature (3000 k) we find that (ni = 1.45 x 10¹6) e/m³ in silicon and (n = 2.5 x 101⁹) e/m³ in germanium and the energy gap in silicon is equal to (1.1ev) and in germanium is equal to (0.66 ev) What is the ratio of the density of the donor added to silicon to the density of the donor added to germanium that makes the Fermi level in the two materials at the same distance from the edge of the conduction band?

At the temperature (3000 k) we find that (ni = 1.45 x 10¹6) e/m³ in silicon and (n = 2.5 x 101⁹) e/m³ in germanium and the energy gap in silicon is equal to (1.1ev) and in germanium is equal to (0.66 ev) What is the ratio of the density of the donor added to silicon to the density of the donor added to germanium that makes the Fermi level in the two materials at the same distance from the edge of the conduction band?

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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