Silicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3 and the value of kT/q to be 25 mV at 300 K. Compared to the undoped silicon, The Fermi level of doped silicon (a) Goes down by 0.13 eV (b) Goes up by 0.13 eV (c) Goes down by 0.427 eV (d) Goes up by 0.427 eV

Silicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3 and the value of kT/q to be 25 mV at 300 K. Compared to the undoped silicon, The Fermi level of doped silicon (a) Goes down by 0.13 eV (b) Goes up by 0.13 eV (c) Goes down by 0.427 eV (d) Goes up by 0.427 eV

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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