Calculate the drift velocity in a semiconductor if the current density is 66.11x109 MS Note: (o=61.7 μ = 0.0056 m V-sec *Calculate answers to two (2) decimal places. *Express your answer in meter per second. *Write your answer in this form, example: 10.25x10-6 Joule per second is written as --> 10.25e-6 J/s *Blackboard may remove the space between the magnitude and unit upon submission of answer, please do not worry this is normal.

Calculate the drift velocity in a semiconductor if the current density is 66.11x109 MS Note: (o=61.7 μ = 0.0056 m V-sec Calculate answers to two (2) decimal places. Express your answer in meter per second. Write your answer in this form, example: 10.25x10-6 Joule per second is written as --> 10.25e-6 J/s Blackboard may remove the space between the magnitude and unit upon submission of answer, please do not worry this is normal.

University Physics Volume 2

18th Edition

ISBN:9781938168161

Author:OpenStax

Publisher:OpenStax

Chapter9: Current And Resistance

Section: Chapter Questions

Problem 9CQ: Do impurities in semiconducting materials listed in Table 9.1 supply free charges? (Hint Examine the...

See similar textbooks

Similar questions

Consider an approximate model of the epitaxial resistivity in a silicon power transistor:A pyramid structure with a square base has a resistor in every edge of the structure.The structure of the model is shown in Figure 3 attached. (a) Based on the description above, draw the relevant structure and include relevant resistors in your diagram.(b) Suppose the value of all resistors is R Ω, calculate the total resistance viewing from any of the a-x pairs.(c) Is the total resistance similar for all possible vertex pairs? Verify your statement above by including relevant calculation proof.
Is it possible to explain the difference between a conductor and an insulator by referring to a semiconductor? A graph would be a great way to illustrate your arguments.
Semiconductors have negative temperature coefficient of resistance. Explain its meaning.
write at least 6 points on the effect of temperature on semiconductor devices?
Explain the difference between a conductor, an insulator, and a semiconductor. Give an example of each to illustrate your comparison.
A new material is found to be superconducting below 77 K. How much resistance will a 75 mm long sample of this material have if it is at a temperature of 69.3 K while connected to a 6.4 V AC-power supply? R = How much thermal energy will it generate?Thermal energy generated =
Does a photovoltaic cell obey Ohm’s Law? Explain briefly
Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.