Calculate the space width in (meter) and the capacitance in (Farad) for a p-n junction when a reverse bias with 3V is applied at T=350K. Assume that NA=1x1020/m³, ND= 1×1018, n¡ = 1×1015/m³, &=11.7, and the cross section area is 1um. О 68e-6, 23е-19 О 6.8e-6, 23e-19 О 6.8e-6, 2.3e-19 O 68e-6, 2.3e-19

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4 points
Calculate the space width in (meter) and the capacitance in (Farad) for a p-n
junction when a reverse bias with 3V is applied at T=350K. Assume that
NA-1x1020/m³, ND= 1×1018, n; = 1×1015/m³, ɛ,= 11.7, and the cross section
area is 1um.
O 68e-6, 23e-19
O6.8e-6, 23e-19
O 6.8e-6, 2.3e-19
68e-6, 2.3e-19
2 points
Determine the maiority carrier concentration(in electrons m³) and the mobility
Transcribed Image Text:4 points Calculate the space width in (meter) and the capacitance in (Farad) for a p-n junction when a reverse bias with 3V is applied at T=350K. Assume that NA-1x1020/m³, ND= 1×1018, n; = 1×1015/m³, ɛ,= 11.7, and the cross section area is 1um. O 68e-6, 23e-19 O6.8e-6, 23e-19 O 6.8e-6, 2.3e-19 68e-6, 2.3e-19 2 points Determine the maiority carrier concentration(in electrons m³) and the mobility
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