Calculate the thermal-equilibrium electron and hole concentrations for compensated p-type silicon at T = 300K doped at Nd = 2 X 10¹0 cm³ and N₂ = 5 X 10¹0 cm ³. a

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Chapter12: Electronic Control Devices
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Calculate the thermal-equilibrium
electron and hole
concentrations for compensated p-type silicon at T =
300K doped at N = 2 X 10¹0 cm-³ and N₂ = 5 X 10¹0 cm-³.
A) no
1.06 x 106 cm
-3
= 3.06 × 106 cm¯
Po
=
Po = 3.60 × 1013 cm
-3
B) no
1.60 × 10¹3 cm
-3
-3
-3
-3
D) no
C) no = 6.21 × 10⁹ cm Po = 3.62 × 10¹0 cm
8.03 × 10⁹ cm
Po = 2.80 x 1010 cm
E) no = 4.69 × 106 cm Po 6.91 x 107 cm
no = 5.12 × 10¹3 cm-3
-3
-3
F)
Po = 1.12 x 10¹4 cm-³
-3
=
-3
Transcribed Image Text:Calculate the thermal-equilibrium electron and hole concentrations for compensated p-type silicon at T = 300K doped at N = 2 X 10¹0 cm-³ and N₂ = 5 X 10¹0 cm-³. A) no 1.06 x 106 cm -3 = 3.06 × 106 cm¯ Po = Po = 3.60 × 1013 cm -3 B) no 1.60 × 10¹3 cm -3 -3 -3 -3 D) no C) no = 6.21 × 10⁹ cm Po = 3.62 × 10¹0 cm 8.03 × 10⁹ cm Po = 2.80 x 1010 cm E) no = 4.69 × 106 cm Po 6.91 x 107 cm no = 5.12 × 10¹3 cm-3 -3 -3 F) Po = 1.12 x 10¹4 cm-³ -3 = -3
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