Consider a diode biased with a constant current which is measured to have a voltage V₁ at temperature T₁ and voltage V₂ at T2. What is bandgap energy EG?
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- How is a solid-state diode tested? Explain.Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?(a) Find the worst-case values of the Q-point current for the diode shown using the ideal diode model if the resistors all have 10 percent tolerances. (b) Repeat using the CVD model with Von =0.6 V.
- A diode is doped with NA=1018/cm3 on the p-type side and ND=1018/cm3 on the n-type side. (a) What are the values of pp, pn, np, and nn? (b) What are the depletion-region width wdo and built-in voltage?Consider the diode circuit shown below. If in the given circuit, Vs is replaced by a 12V battery and diodes D1 & D2 are considered ideal, what is the potential Vout equal to?A diode has a doping of ND = 1015/cm3 on the n-type side and NA = 1017/cm3 on the p-type side. What are the values of wdo and φj? What is the value of wd at a reverse bias of 10 V? At 100 V?
- SOLVE (show the process) for the current at room temperature in a diode if the forward voltage is given at Vd=0.3 and the reverse saturation current Is=100nAA silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 ADraw the cross section for a pn diode similar to that as shown if the fabrication process utilizes a p-type substrate in place of the n-type substrate depicted as shown.
- Determine the graph of vo=f(v1) from the circuit shown. For R=R1=10k and vz=5v and show if the diodes conductIn PN junction in series with a 100 ohms resistor, is forwarded biased. So that a current of 100 mA flows. If the voltage across this combination is instantaneously reversed at t = 0 current through diode is approximately given by:If a silicon diode's relationship between voltage and current is given by the approximation What is the diode voltage at 3.2 A for a reverse saturation current of 30 pA? Provide your response in millivolts.