Consider a gallium arsenide sample at T= 300 K with doping concentrations of Na =0and Na= 1016 cm³. Assume complete ionization and assume electron and hole mobilitiesare 3900 cm?/V.sec and 1900 cm²/V.sec, respectively. Calculate the drift current density(A/cm) if the applied electric field is E=60 V/cm.wwwm374.4 O152 O182.4 O340O O O

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Answered: Consider a gallium arsenide sample at…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Boron atoms are added to a Si film resulting in an impurity density of 4 × 10^16 cm^–3.(a) What is the conductivity type (N-type or P-type) of this film?(b) What are the equilibrium electron and hole densities at 300 K and 600 K?(c) Why does the mobile carrier concentration increase at high temperatures?(d) Where is the Fermi level located if T = 600 K?
Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?
Suppose the hole concentration in silicon sampleis described mathematically by p(x) = 105+1019 exp(− x/ Lp) holes/cm3, x ≥ 0 in which Lp is known as the diffusion length for holes and is equal to 2.0 μm. Find the diffusion current density for holes as a function of distance for x ≥ 0 if Dp = 15 cm2/s. What is the diffusion current at x = 0 if the cross-sectional area is 10 μm2?
A 10KQ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm ,at the working temperature. The intrinsic carrier density of Ge is 2.5 x 1019 m3, and the electron and hole mobilities are 0.4 m2 N.sec. and 0.2 m? N.sec. respectively.
An ideal photo-diode of unit quantum efficiency, at room temperature, is illuminated with 8 mW of radiation at 0.65 µm wavelength. Calculate the current and voltage output when the detector is used in the photo-conductive and photovoltaic modes respectively. The reverse saturation current (Is) is 9 nA
Electrical Engineering a light beam illuminates a detector made of n type silicon with doping Nd=9.3E16cm-3 such that the carrier generation rate is g'=6.6E21cm-3s-1. Assume that tau n0=1.4E-6 and tau p0=5.1E-7, T0=300K. a) determine the thermal equilibrium value of Ef-Efi. b) calculate the quasi-fermi levels for electrons and holes with respect to Efi.
Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.
A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.
GaAs and GaP make solid solutions that have the samecrystal structure as the parent materials, with As and P randomlydistributed throughout the crystal. GaPxAs1 - x existsfor any value of x. If we assume that the band gap varies linearlywith composition between x = 0 and x = 1, estimatethe band gap for GaP0.5As0.5. (GaAs and GaP band gaps are1.43 eV and 2.26 eV, respectively.) What wavelength of lightdoes this correspond to?
Consider a gallium arsenic (GaAS) sample at T=300 K,with doping concentrations of NA=1017 cm-3 and ND=0. Assume complete ionization: a) Calculate the drift current density if the applied electric field is E=10 V/cm. b) Calculate the resistivity of the semiconductor.
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1.What is the Fermi-Dirac probability for electrons at the intrinsic Fermi level, fe(Ei)?

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