Given a 202-cm n-type Ge bar with material life time of 100u s, A-Imm and L=1 cm. One side of the bar is illuminated with 10 photos/s. Assume that each incident photon generates one electron-hole pair and that these are distributed uniformly through the bar. Find the bar resistance under continuous high excitation at room temperature. Assume n-6.25×102/cm",a-3.8x10'cm?/v-s, Hp-1.8×10 cm?/v-s.

Given a 202-cm n-type Ge bar with material life time of 100u s, A-Imm and L=1 cm. One side of the bar is illuminated with 10 photos/s. Assume that each incident photon generates one electron-hole pair and that these are distributed uniformly through the bar. Find the bar resistance under continuous high excitation at room temperature. Assume n-6.25×102/cm",a-3.8x10'cm?/v-s, Hp-1.8×10 cm?/v-s.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

1- A 10kΩ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm3 ,at the working temperature. The intrinsic carrier density of Ge is 2.5 × 1019 m -3 , and the electron and hole mobilities are 0.4 m2 /V.sec. and 0.2 m2 /V.sec. respectively.
GaAs and GaP make solid solutions that have the samecrystal structure as the parent materials, with As and P randomlydistributed throughout the crystal. GaPxAs1 - x existsfor any value of x. If we assume that the band gap varies linearlywith composition between x = 0 and x = 1, estimatethe band gap for GaP0.5As0.5. (GaAs and GaP band gaps are1.43 eV and 2.26 eV, respectively.) What wavelength of lightdoes this correspond to?
An ideal photo-diode of unit quantum efficiency, at room temperature, is illuminated with 8 mW of radiation at 0.65 µm wavelength. Calculate the current and voltage output when the detector is used in the photo-conductive and photovoltaic modes respectively. The reverse saturation current (Is) is 9 nA
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
Consider a pure Sn crystal that has εr = 24 and the number of Sn atoms per unit volume, N = 2.39 × 1028 m-3. What is the electronic polarizability due tovalance electrons per Sn atom? Suppose that a Sn crystal sample is electroded on opposite faces and has a voltage applied across it. By how much is the local field greater than the applied field? Given, εo= 8.85 × 10-12 F/m.
Suppose the hole concentration in silicon sampleis described mathematically by p(x) = 105+1019 exp(− x/ Lp) holes/cm3, x ≥ 0 in which Lp is known as the diffusion length for holes and is equal to 2.0 μm. Find the diffusion current density for holes as a function of distance for x ≥ 0 if Dp = 15 cm2/s. What is the diffusion current at x = 0 if the cross-sectional area is 10 μm2?
Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobilityof the semiconductor sample.
For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width ϗ(kai)DT (μm) when the surface is inverted.
Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.
Find the electric field (magnitude and direction) at the point P for the following 3-charge configuration, where Q= +1nC and a=2cm. Show detailed work and a free body diagram.