Consider an NPN Silicon BJT which is to be designated with an Emitter Efficiency of ye = 0.995. To maintain a reasonable base resistance, the base is doped with Boron, with NA = 1 x 1016 cm-3. Given that L, = W, = 0.7µm, De = 12cm2s-1, D, = 30cm?s-1 and npo = 1.88 x 10 cm-3. Calculate the n-type doping concentration needed in the emitter.

Consider an NPN Silicon BJT which is to be designated with an Emitter Efficiency of ye = 0.995. To maintain a reasonable base resistance, the base is doped with Boron, with NA = 1 x 1016 cm-3. Given that L, = W, = 0.7µm, De = 12cm2s-1, D, = 30cm?s-1 and npo = 1.88 x 10 cm-3. Calculate the n-type doping concentration needed in the emitter.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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