Assume you are to create n+pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3,   6.8/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know Ln = 10 μm, Lp = 4 μm, μn = 1600 cm2/Vs, μp = 600 cm2/Vs, ni = 1,5 1010 1/cm3, q = 1,602 10-19 C, er = 12, eo = 8,85 10-12 F/m, VT = 25 mV.  What is the minimum VCE for operation in active mode assuming hFE = β is very large?

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Unijunction Transistor (UJT)

The Unijunction Transistor (UJT) is a three-terminal switching semiconductor device. It contains an n-shaped silicone object bar with a terminal attached to its two ends known as base one and base two. The third terminal is connected to a highly enclosed p-type material attached to the bar section of its length and is known as emitter. As there is only one corrective cross within the device, it is therefore called the 'Unijunction' transistor. The characteristics of the single junction transistor show the wrong resistance if it finds use in resting oscillator circuits for various applications.