d) Repeat part b) for a reverse bias voltage of 0.65 V, Wdep пт e) Repeat part c) for a reverse bias voltage of 0.65 V. n(xp): x 10 "ст-1 -10 –1 p(®N) = %3D

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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only the sub-part d and e 

Pay attention to the units.
q = 1.6x10¬19C
€g = 1.062x101² C/Vcm
kT/q=0.026V
0.61x1016 cm-1 and Na
Consider a silicon PN junction at room temperature with N.
101° ст 1.
ст
= 0.64x
The junction is forward-biased with 0.65 V. Find
a) the built-in potential, Pbi,
Фы
b) the width of the depletion layer, Wdep,
W dep
пт
c) the minority carrier densities at the edges of the depletion layer,
n(xp) =|
x 1015 ст -1
p(xN) =
x 10'? ст
1
d) Repeat part b) for a reverse bias voltage of 0.65 V,
Wdep
nm
=
e) Repeat part c) for a reverse bias voltage of 0.65 V.
n(xp) =
x 10-7cm-1
ст
p(@x) =
x 10–10
ст
-1
Transcribed Image Text:Pay attention to the units. q = 1.6x10¬19C €g = 1.062x101² C/Vcm kT/q=0.026V 0.61x1016 cm-1 and Na Consider a silicon PN junction at room temperature with N. 101° ст 1. ст = 0.64x The junction is forward-biased with 0.65 V. Find a) the built-in potential, Pbi, Фы b) the width of the depletion layer, Wdep, W dep пт c) the minority carrier densities at the edges of the depletion layer, n(xp) =| x 1015 ст -1 p(xN) = x 10'? ст 1 d) Repeat part b) for a reverse bias voltage of 0.65 V, Wdep nm = e) Repeat part c) for a reverse bias voltage of 0.65 V. n(xp) = x 10-7cm-1 ст p(@x) = x 10–10 ст -1
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