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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, where
D0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.
N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.
(a) What is the junction depth after a 1-h drive-in at 1,100°C?
(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at
100°C

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