Determine IB, IC, IE, VB, VC, and VE. Assume |VBE| =0.7V, VCE = 0.3V (edge of saturation), RL = 500Ω, and C1, C2 → ∞. Determine also the input voltage (may extend from the supply voltage range) where the BJT goes from “cut-off to active” and where it goes from “active to saturation”.

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A: Given circuit is as shown below, Given, gm1= gm2= 1mS,  Rx = 75 kΩ

Q: If VCC=10V, RB1=12kΩ, RB2=4kΩ, RC=2kΩ, RE=1kΩ, VBE=1V, hfe=300, VT=26mV, CS=1uF, CE=5uF in the…

A: If VCC=10V, RB1=12kΩ, RB2=4kΩ, RC=2kΩ, RE=1kΩ, VBE=1V, hfe=300, VT=26mV, CS=1uF, CE=5uF in the…

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A: RC=1.8 kohmRE=2.2 kohm

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Q: which of the following devices dose not belong to the transiator family? a-BJT b-IGBT c-GTO…

A: BJT: BJT means bipolar Junction transistor. It is having 3 terminals. Those are emitter, base and…

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A: In all the BJTs the emitter and base of each BJT gets short circuited  and hence each BJT will be in…

Q: Vcc=15V RB 220k or BC238 B=200 VBE(on)=0.7V Cci Rs 100Ω 4.7μ Q1 Vo Vs RE 1.2ko Cco 4.7µF RL 1000 Rin…

A: consider the given question;

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A: As per guidelines, we can only provide a solution for the first Question in Multiple types of…

Q: calculate: wc1, wc2 and transfer function and Gain voltage C2 R1 3.9kQ 1nF V1 C1 R2 1Vpk 1kHz 0°…

A: The solution is given below

Q: Vcc RFC 100 μΗ 100 pF Ce C2 10 pF RB 1 uH CB 1 nF RB2 C 100 pF Rg

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A: Because of complexity and time constraint, We are answering part (a) of the problem. Please repost…

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A: IC denotes the current which is from the collector terminal of the transistor.

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A: “Since you have posted a question with multiple sub-parts, we will solve the first three sub-parts…

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Q: Design the encoder binavy iF the Vref =8V. 4-bit flash ADC.what Will be out Put for Vin = 5.5 %3D

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A: Dear student as per our guidelines we are supposed to solve only one question.kindly repost other…

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Q: Considering the output characteristic of the BJT, find the value of RC required to obtain 12V VCE…

A: From the graph, for any value of VCE which is greater than knee voltage,hence the collector current…

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.