Determine Q-point for the diodes in the circuit given below using the ideal diode model where, R₁ = 8.2 k2, R₂ = 12 k2, and R3 = 10 k. (Note: Label the diodes from left to right.) 9 +2 V
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- The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.A diode is doped with NA = 1018/cm3 on the p-type side and ND =1019/cm3 on the n-type side. (a)What is the depletion-layer width wdo? (b) What are the values of xp and xn? (c) What is the value of the built-inpotential of the junction?(d) What is the value of EMAX? Use Eq. E(x) = 1 /εs ∫ ρc(x) dxand as shown.The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)
- A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AConsider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°C
- An abrupt pn junction, a diode, is fabricated using 1017 acceptor atoms cm-3 on the p side and 10^15 donors cm^-3 on the n side of the diode. The geometry of the pnjunction is shown in the figure below.Assume that when the diode is illuminated with light (with photon energy > bandgap energy) 10^21 EHPs are generated per cm^-3 per sec. Also Assume that the electron and hole recombination times are 10 microsec and that Dp =12 cm2/s and Dn = 18 cm2/s . If w =4mm, t = 4mm L1 = 2mm and L2 = 2mm, calculate the resistance of the p side and the n side of the pn junction due to (δn and δp), assume that they act as two resistors in series and determine the current through the pn junction if the reverse bias voltage is 2V. T = 300K.Calculate the total current of a circuit with a 9.5 V voltage source connected in series with a directly biased silicon diode and a series resistor of 440 Ω. Consider the second approximation of the diode where it is considered to be connected to a battery in series. Units of the response in milli amperes. Note: I put the original exercise in Spanish, so that it is better understood. Explain step by step, please.Given the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) a) Conditions required wherein none of the diodes are conducting b) If both diodes are not conduction, what is Vo? Express in terms of Vi c) Plot the overall relationship of Vo and Vi in the coordinate system shown below. Remember, you are to plot the transfer characteristics of the circuit.
- In the following circuit, LED1 is a green diode with an ignition voltage of 2.1V, LED2 is a diode red color with 1.8V ignition voltage, while LED3 is a blue diode with ignition voltage on 4V, consider that beta = 100 for the BJT and that Kn = 0.5mA V2 and VT = 8V for the MOSFET, while the Zener diode has a voltage of 5.1V. Calculate the current of the blue LED.(a) Calculate the current at t = 0+ in the circuit shown. (b) Calculate IF, IR, and the storage time expected when the diode is switched off if τT = 8 ns.Determine Q-point for the diodes in the circuit given below using the ideal diode model where, R1 = 12.2 kΩ, R2 = 16 kΩ, and R3 = 14 kΩ. (Note: Label the diodes from left to right.)