Vcc 15 V RB D₁ Dbreak Figure 4.167 1k 0 U₁ + M₁ MbreakN OPAMP R₂ R₁ 4.7 k 4.7 k 0 RL 20 0 4.167 The circuit in Fig. P4.167 is a voltage regulator uti- lizing an ideal op amp. (a) Find the output voltage of the circuit if the Zener diode voltage is 5 V. (b) What are the current in the Zener diode and the drain cur- rent in the NMOS transistor? (c) What is the op amp output voltage if the MOSFET has VTN = 1.25 V and Kn = 150 mA/V²?

Figure q4.1 shows a circuit with a practical silicon BJT. Asses it with the aid of an equivalent circuit to determine the mode of operation when b=50. Justify your answer by showing proof using junction biasing. Assuming the BJT is in active mode.

RI R3 Ve Figure Q4.b c) The amplifier in Figure Q4.b has an offset voltage Vos = ±3 mV, input bias current Ig = 13 µA and input offset current los = 6 µA. Calculate the maximum absolute output voltage that could occur due to the bias currents and offset voltage alone (i.e. with the signal source remaining in the circuit but turned down to zero volts), given that R1 = 1 kN, R2 = 100 kN and R3 =

5v For the adjacent circuit, the op-amp is ideal. The diode can be modeled with a constant voltage drop model having a 0.7 volt drop when it is on. a) Find the value of V, that puts the diode at the boundary between on and off (meaning that the diode is ON, but current is approaching zero). b) Make a plot of V, versus V3. Note: Justify all assumptions briefly but clearly. R2 = 3K R, = 1.4K R3 = 2K Vo

Consider the operational rectifier or superdiode circuit, with R=1kohm. For v1=10mV, 1V, and -1V, what are the voltages that result at the rectifier output and at the output of the op amp? Assume that the op amp is non-ideal and that its output saturates at ± 12V. The diode has a 0.7-V drop at 1-mA current.

As a maintenance engineer in a semiconductor company, you are given a task to replace the current version of dc-biasing circuit for a faulty tester machine. This dc-biasing circuit used an n-channel JFET as shown in Figure 2. Re-design a new dc-biasing circuit using an n-channel D-MOSFET that can produce a similar output current, IDQ as the previous circuit. Your tasks are: (i) Calculate the operating point (IDQ and VGSQ) of the dc-biasing circuit in Figure 2. Then sketch the JFET network transfer curve (ID and VGS). (ii) Without changing the circuit configuration, calculate the values of source resistor, RS and RB to achieve this objective. Determine the commercial value of the new RS and RB.    For cost reduction reason, the values of RD, RA and VDD should be maintained.    The chosen D-MOSFET has a maximum drain current of 8 mA and gate-source cutoff voltage of – 15V.    The new RS value should be 3 times larger than the old RS used in the JFET network to compensate for the high…

Design a DC-DC converter of the circuit with the following specifications: Input voltage (12-40) V; output voltage 24 V; output current is varied from (2 to 4)A: C.C.M with output voltage ripple not more than 1%. Knowing that the switching frequency is 25 kHz. Also draw the current waveforms. And give the Design specifications of diode (PIV, and Vavg ,I peak) and (V Diod , I Diod) of Diode. Buck Boost Converter lin ip + T | Va R ic i.

QUESTION 4 In this voltage divider bias circuit, the input is at the base. Output is at the emitter with a high input resistance and low output resistance. The maximum voltage gain is 1 and the coupling capacitors must have a negligible reactance at the frequency of operation. (use to answer a and b) a. Derive the expression for the voltage gain, current gain, and power gain in terms of power delivered to the load, RL. b. Sketch both the DC and AC equivalent circuits. c. Derive the expression for ripple factor of Half Wave Rectification with a capacitor filter.

Question No. 2 a Inan experiment the voltage required for the device is 9V dc but unfortunately the transformer avai lable is of 220-6 V dc. Design a circuit which can power the device (use only methods that we have studied excluding Zener diode) b. Explain the behavior of the foll owing circuits if the input signal is triangular wave of peak voltage 5V and the biasing battery of 3V 4-

Determine the DC bias values using DC equivalent circuits (in order of VE, VB, VC)