Fig. Vin = 0.55 V and k = 0.070 mA/y² and 1 = 0 . The LED cut-in voltage is V,(LED) = 2.2 V. Design the circuit by determining the values of Rp and MOSFET width to shows an n-channel MOSFET switching circuit to turn on the LED with parameters length (W/L) ratio such that In = 11.6 mA for input voltage V, = 6.2 V and VDs = 0.18 V. +5 V ID Rp Light output ww

Fig. Vin = 0.55 V and k = 0.070 mA/y² and 1 = 0 . The LED cut-in voltage is V,(LED) = 2.2 V. Design the circuit by determining the values of Rp and MOSFET width to shows an n-channel MOSFET switching circuit to turn on the LED with parameters length (W/L) ratio such that In = 11.6 mA for input voltage V, = 6.2 V and VDs = 0.18 V. +5 V ID Rp Light output ww

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

In the Mosfet circuit given below, R1+R2=50 kΩ, RD= 7.5 kΩ, VDD= 5V, VTP= -0.8 V, Kp= 0.2 mA/V2 is given. Calculate the ID current by determining the working region of the mosfet.
Find the rout resistance, the ro internal resistance of the mos transistor will not be neglected, transistör Gm vapura are not the same
Calculate the on-resistance of an NMOS transistor with W/L = 10/1 for VGS = 5 V, VSB = 0,VT O = 1 V, and VDS = 0 V. (b) Calculate the onresistance of a PMOS transistor with W/L = 10/1for VSG = 5 V, VSB = 0, VT O = −1 V, andVSD = 0 V. (c) What do we mean when we say thata transistor is “on” even though ID and VDS = 0?(d) What must be the W/L ratios of the NMOS andPMOS transistors if they are to have the same onresistance as parts (a) and (b) with |VGS| = 3.0 V?
Consider a voltage-divider configuration of n-channel enhancement-type MOSFET where R1 = 12 MΩ, R2 = 7 MΩ, RD = 3 kΩ, RS = 1 kΩ. The MOSFET has a threshold voltage VGS(Th) = 3V, and one example point on the transfer characteristics curve is VGS(on) = 6V, ID(on) = 5 mA. Determine VGSQ, IDQ, Vs, VD, VDS assuming VDD = ( 80 ÷ 10 ) +20 V
Determine the drain-to-source voltage (VDS) in the circuit shown in Fig. 17 if VDD = +18V and RD = 620Ω. The MOSFET data sheet gives VGS (off) = – 8V and IDSS = 12 mA.
What is the minimum bandwidth of the NMOS current mirror as shown if IS = 150 μA, Kn = 25 μA/V2, λ = 0.02 V−1, CGS1 = 3 pF, CGD1 = 0.5 pF, and (W/L)1 = 5/1 = (W/L)2?
Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.
We can calculate the transconductance parameter gm of a MOS transistor, if we know either its Gate-Source voltage or its Drain current. True or False if we know the early voltage of a MOSFET, we can calculate the channel length modulation parameter
4) By drawing the small signal model of the circuit given below, we can determine the total voltage and current gain values of the circuit, without the bypass capacitor on and without the bypass capacitor. Calculate separately for the two cases as it will be in the circuit (connected to the emitter end of the transistor). (β = 100, rS = 600 Ω, R1 = 27 KΩ, R2 = 4.7 KΩ, RC = 3.3 KΩ, RE = 680 Ω, RL= 15 KΩ, VCC = 10 V)
Find the Q-point for the transistor ifR = 20 kΩ, VTO = 1 V, and W/L = 2/1.
An N-channel MOSFET with N+-poly gate is fabricated on a 15 n. cm P-type Si wafer (a) Determine the flat-band voltage Vfb. (b) What is the threshold voltage, Vt? (c) A circuit designer requested N-MOSFET with Vt = 0.5 V from a device engineer. It was not allowed to change the gate oxide thickness. If you are the device engineer, what can you do? Give specific answer.; including what type of equipment to use.