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For each state of an n-channel enhancement-mode MOSFET that follows, determine what operating region the MOSFET is in if the threshold voltage V, is 3 V. a. Vas = 2 V, Vas = 5 V b. Ves = 4 V, V4 = 5 V c. Ve = 6 V, V= 5 V d. V = - 2.5 V gs ds gs

For each state of an n-channel enhancement-mode MOSFET that follows, determine what operating region the MOSFET is in if the threshold voltage V, is 3 V. a. Vas = 2 V, Vas = 5 V b. Ves = 4 V, V4 = 5 V c. Ve = 6 V, V= 5 V d. V = - 2.5 V gs ds gs

Refrigeration and Air Conditioning Technology (MindTap Course List)
Refrigeration and Air Conditioning Technology (MindTap Course List)
8th Edition
ISBN:9781305578296
Author:John Tomczyk, Eugene Silberstein, Bill Whitman, Bill Johnson
Publisher:John Tomczyk, Eugene Silberstein, Bill Whitman, Bill Johnson
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3.29. For each state of an n-channel enhancement-mode MOSFET that follows, determine what operating region the MOSFET is in if the threshold voltage V, is 3 V. a. V = 2 V, Vds=5 V b. Vas = 4 V, Vas = 5 V c. Vg = 6 V, V4s = 5 V gs с. %3D d. Ve = - 2.5 V gs
Transcribed Image Text:3.29. For each state of an n-channel enhancement-mode MOSFET that follows, determine what operating region the MOSFET is in if the threshold voltage V, is 3 V. a. V = 2 V, Vds=5 V b. Vas = 4 V, Vas = 5 V c. Vg = 6 V, V4s = 5 V gs с. %3D d. Ve = - 2.5 V gs
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Step 1

A n-channel MOSFET is made up of a p-type substrate that is implanted with two n-type materials that ultimately form the source and drain through metallic connections.

With an insulated substance like as silicon dioxide, a gate terminal is generated between the source and drain terminals, avoiding direct contact of the gate terminal with the other two terminals through the substrate.

 

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