For the transistor shown below p=hfe = hFe = 150, VBE =0.7V, and VT= 25mV. All capacitors are ideal. Calculate v.. I k2 I kQ ww ww 100 k2 100 k2 16 V 16 V 2 V ww 200 k2 2 V 200 k2
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- Q4: Detenmine Vs and Vg for the E-MOSFET circuit in Figure 2. Assume this particular MOSFET has minimum values of oo = 100 MA at Vs = 4 V and Vo = 3 V. Voo 424V ° [ ”n R, 100k FIGURE 2The current ICBO for a transistor is measured to be 10 nA at 20-degree Celcius. If the temperature of the device is raised to 80-degree Celcius, then the value of cureent ICBO will becomes _________nA.An NMOS transistor has the following values: Vto = 1V, KP = 50 x10-6A/V2, L= 5 x10-6m, and W= 50 x10-6m. For each set of voltages, state with reasons the region of operation and compute the drain current. i. VGS = 4V and VDS = 10V ii. VGS=4V and VDS =2V iii. VGS =0V and VDS = 10V
- (c) Figure 3 shows a bipolar junction transistor circuit in common-emitter configuration. Given that VBE = 0.7 v and ß = 110. Determine the current IB, IC, IE and the voltage VCE.An NPN transistor has a scale current of 7 x 10-14 A and β = 100. What is the emitter current if VBE = 0.70 V? Express your answer in milliamperes.Find the Q-point for the transistor for R1 = 100 kΩ, R2 = 220 kΩ, R3 = 24 kΩ,R4 = 12 kΩ, and VDD = 12 V. Assume thatVTO = 1 V, γ = 0.6√V, and W/L = 5/1
- This multiple choice questions from electronics lab. Pic one is questions && pic two laws. Ic:current of collecter transistor. Ib:current base Ie:of emitter for transistor. I HOPE to help me,thx advanced.Show that the drain current IDQ is approximately equal to 3.65 mA (graphically or otherwise). Then calculate VDSQ.Determine the value of emitter voltage VE, when VCC=19V, R4=1396 ohms, R3=392 ohms, VC=8 V and R2=6025ohm R5=448 ohm
- Using IC that is approximately equal to IE. Determine the value of emitter voltage VE, when VCC=17V, R4=1441 ohms, R3=242 ohms, VC=9 V and R2=5256ohm R5=303 ohmFollow the instructions below using the parameters below. 0.6um technology. Any size transistor (W or L) must be divisible by 0.3um to be produced by any company. Always set the sizes of W and L assuming the smallest L possible for each transistor according to the technology. Include units VDD = 3V: VT0P = 0.7V; VTON = 0.5V; unCox = 99uA / V ^ 2 upCox = 33uA / V ^ 2; gamma = 0.1 sqrt (V); 2ΦF = 0.6V Design a bit of a static RAM memory when the capacitance of Q, CQ = 5fF and the capacitance of the line bit is 1pF. a. Draw your schematic identify each node and list the transistors. b. Draw the sense amplifier circuit and the precharge-equalizer, if the user wants to precharge the line to VDD. c. The access transistors in a RAM memory bit have a size (W / L) a = 6um / 0.6um Determines the minimum size of the NMOS transistors in the inverters. Justify the size you are choosing for each transistorWhat is the value of tP0 for a technology with L = 250 nm, n = 500 cm2/V-s,VDD = 3.3 V and VT N = VDD/4.