From the circuit below, calculate the DC quantity lĘ:
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- According to the circuit given in the figure, VT=25mV, |VBE|=0.7V, R1=1487.51Kohm, R2= 7.42Kohm, R3= 6.71Kohm , R4= 2.87Kohm, VCC= 13.00V, VEE= 1.00V , VA=28.21V , Beta= 120.00 , Rs= 36.18ohm, Ry= 15.61Kohm Calculate the IC current, Ri, R0 and voltage gain(V0/V1) according to the source by performing a complete analysis. When performing your operations, 2 steps will be taken after the point. choose the closest one from the stylish ones according to the +/-10% margin of error. There is only 1 correct answer to the question.In the circuit given in the figure, VT = 25mV, | VBE | = 0.7V, R1 = 1402.66Kohm, R2 = 32.67Kohm, R3 = 2.91Kohm, R4 = 1.25Kohm, VCC = 10.00V, VEE = -5.00V, VA = 25.00V, Since Beta = 208.00, Rs = 28.63ohm, Ry = 13.62Kohm, calculate the IC current, Ri, R0 and the voltage gain according to the Source (V0 / V1) by full analysis.In the circuit given in the figure, VT = 25mV, | VBE | = 0.7V, R1 = 1519.62Kohm, R2 = 48.01Kohm, R3 = 3.22Kohm, R4 = 1.38Kohm, VCC = 13.00V, VEE = -6.00V, VA = 19.82V, Since Beta = 163.00, Rs = 23.65 ohm, Ry = 18.08Kohm, by Source calculate IC current, Ri, R0 and voltage gain (V0 / V1) with full analysis.
- In the circuit given in the figure VT = 25mV, | VBE | = 0.7V, R1 = 712.91Kohm, R2 = 43.27Kohm, R3 = 2.29Kohm, R4 = 0.98Kohm, VCC = 10.00V, VEE = -4.00V, VA = 10.06V, Beta = 137.00, Rs = 38.43ohm, Ry Calculate the IC current according to = 16.55Kohm, Ri, R0 and the voltage gain (V0 / V1) according to the Source by full analysis When making your transactions, 2 steps will be taken after the point. Select the closest option according to +/- 10% margin of error. There is only one correct answer to the question.describe the working principle OF MOS (need only handwritten solution .otherwise downvote.)In the Boost DA-DA circuit:Source voltage (E) value: in the range of [17-29] (volts),Switching frequency (f) value: 20 khz,Voltage between load ends: 40VCapacitance value: 470uFPower dissipated at load: 10 watts What is the lowest inductance L, in uH, that can keep the DC-DC converter in continuous current under these conditions? a) 269.3731 b) 415.4375 c) 364.8204 d) 163.6472 e) 578.1875
- Consider the circuit of Figure 1 using VCC = 10 volts, R1 = 10 kΩ, R2 = 3.3 kΩ, Re = 4.7 kΩ and Rc = 5.6 kΩ. Using the approximation of a lightly loaded “stiff” voltage divider, determine the ideal endpoints of the DC load line and the Q point, and record these in Table 1.1. Can you show process of solutionDefine three clockwise mesh current from the circuit and employ the supermesh technique to obtain a numerical value for each??a- In the circuit shown in Figure VCC = 13.6 V, görülen = 145and since the transistor is of silicon type,Required for IC = 5 mA when VCE = 6.8 VCalculate the RC and RB values. Calculate the power consumed by the transistor.b- RE = 1.2K to the emitter end of the transistorIf connected, calculate VCE, IC, IB currents.Interpret the final state of the circuit.
- Q3:Choose One of the following: : (A)In common emmiter voltage divider bias of BJT, Vcc = 25V; R1= 10 k ohm; R2, = 2.2 k ohm ;Rc = 3.6 k ohm and RE = 1 k ohm.Determain Vec at ß = 120.using Exact analysis Draw the equvelent circuit inaddition the DC load line curve . (B)For self bais(Emitter resistace bais) of BJT,Vcc= 22 V, lb = 45macroA, a = 0.99, RE = 1 k ohm. Determain VCe Draw the equvelent circuit inaddition to DC load line curve.For the circuit given below, let VBEQ=0.7 V, then the Q-point(VCEQ,ICEQ) equals:For the circuit in the figure, find the ones requested in the questions by using the following values? Vcc= 11 V, β=125, RF=227 kΩ, RC=3,6 kΩ, RE=0,9 kΩ IB=? IC=? IE=? VCE=? VCB=?