From the give two-BJT configuration in Figure 1. You may assume that both transistors are the same with the same β, VBE,on = 0.7 V, and VCE,EOS = 0.3 V a. Determine the minimum voltage VBE that will turn ON both Q1 and Q2. b. Determine the minimum voltage VCE before either transistor operates in saturation. c. Derive the DC current gain AI = IC/IB in terms of β for the two-transistor circuit. You may assume that β is large.

Q: A depletion-mode NMOS transistor has VTO =−1.5 V, 2φF = 0.75 V, and γ = 1.5√V. Whatsource-bulk…

A: Write the given values in the question.

Q: 1.) IS THE POSSIBLE SWING MA XIMI ZED? a-) YES. THE SELECTED VALUE OF Vour IS EXACTLY HAF of THE…

A: The given circuit is as shown below, We need to justify whether the possible swing is maximized or…

Q: Consider the figure shown below and answer the questions that proceed. For Vcc = 20V, R1 = 120 kΩ,…

A: Considering R2 = 50 ohm as typing error and R2 taken as 50 kohm

Q: Calculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 4 V,if W…

A: When VGS is less then the VTN, the drain current will be zero as the device is in cut-off region.…

Q: Calculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 3.3 V,if…

A: When VGS is less than the VTN, the drain current will be zero as the device is in cut-off region.…

Q: a) Calculate the drain current in an NMOS transistor if Kn = 250 μA/V2, VTN = 0.75 V, λ = 0.02 V-1,…

A:

Q: The beta of the transistor in the circuit in the figure is = 120, VBE = 0.6V. has been given. Find…

A:

Q: 1. Is the possible output swing maximized? OYes. The Vp,SAT Oof each transistor are equal of value…

A: The circuit is as shown below,

Q: a. Given in FET characteristics: drain current (Id) of 4 mA, gate-source voltage(Vs) of -2 volts.…

A: Drain  current in jfet = IDSS(1-(VGS/VT))2 Assume mosfet is in saturation , drain current  ID =…

Q: Describe three regions of BJT operation. Consider (i) the state of each junction (base-emitter,…

A:

Q: Derive the relation between alpha and ß Prove that Iceo =ßlcbo What line in the output…

A: RELATION BETWEEN α and β: It is known that:IE=IB+IC..............(i)where,IE=Current flowing out of…

Q: A particular MOSFET has VA = 10 V. For operation at 10 μA and 100 μA, what are the expected…

A:

Q: #6) For the BJT transistor circuit given below, determine: IB, lc, lE, VCE, and Vce Page | Re Vcc RB…

A: In this question,   We need to determine the all known currents and voltage.  We know  Forward bias…

Q: Q4/ For the PNP transistor circuit with B=120, VEE = 12 V, VB = 0 V, Vcc =-12 V, and RE 3 k2, what…

A: We know condition to Operate BJT in active mode .

Q: Pro Given the following circuit below (a) Calculate the Q-point for this transistor. (b) How much…

A:

Q: a) BJT structure is consist of three regions, emitter, base and collector. Sketch a diagram of an…

A: Note: We are authorized to answer one question at a time since you have not mentioned which question…

Q: (a) What happens to the voltage VC if the transistor is replaced by one having a larger value of β?…

A:

Q: A PMOS transistor is operating with VBS = 0 V,VGS = −1.5 V, and VDS = −0.5 V. What are the region of…

A:

Q: Derive the expression for Ic, VCE in case of fixed bias configuration of transistor

A: Collector current IC: It is the current that flows in the collector terminal in the BJT.

Q: For the common base connection of an npn silicon transistor, supply at emitter is 10 V and emitter…

A:

Q: What is the types of BJT transistor, list them with draw the basic construction for each one, then…

A: Types of BJT transistor: 1. NPN Transistor 2.PNP Transistor

Q: Plot the common-emitter output characteristics for a pnp transistor having Is = 1 fA, Bfo = 75, and…

A: According to the question we have to plot the common-emitter output characteristics.

Q: BO + Q1 CE VBE Q2 +

A:

Q: easy question that has no complexity , I attached the experimental work with the solution of the…

A: “Since you have posted a question with multiple sub-parts, we will solve first three subparts for…

Q: If an npn silicon transistor is operated at VCE = 5 V and Ic= 100 μA and has a current gain of 100…

A: GIVEN             VCE = 5 V               IC  = 100 μA               β   = 100               Rin = ?

Q: (2-a) Determine the Q point, then illustrate it on the transistor I-V characteristic curves. (2-b)…

A: In the above given question they have mentioned a common emitter transistor circuit. Here our…

Q: (a) Draw a load line on the characteristics determined by VCC = 12 V and RC = 1.5 k for a fixed bias…

A: (a) Draw a load line on the characteristics determined by VCC = 12 V and RC = 1.5 k for a fixed bias…

Q: In a BJT, VBE=0.7 V and thermal voltage VT=25 mV. If the dc collector current is 145 mA, then what…

A: For a bipolar junction transistor (BJT), the transconductance (gm) is defined as the ratio of the dc…

Q: Consider a two-BJT configuration in Figure 1. You may assume that both transistors are the same with…

A: We need to find out the voltage to on transistor , then we will find dc current Gain .

Q: 1. a) With the aid of a diagram, explain the working principle of a common-base NPN BJT transistor…

A: (a) Common-base NPN BJT transistor   (A)NPN BJT Common Base TransistorIn a C-B configuration, the…

Q: Q1) For common collector circuit, exactly find:- 1. VCC value that lead to best Q-point? 2. The…

A:

Q: 2) Determine the following parameters according to the emitter-bias configuration BJT circuit which…

A:

Q: Consider a two-BJT configuration shown by the image. You may assume that both transistors are the…

A:

Q: . In the circuit shown in the figure above, the Q1 and Q2 BJT transistors operate in the forward…

A:

Q: 4. For the circuit shown below, verify that the BJT triansistor operates in the saturation region by…

A:

Q: Q1) The BJT transistor with Bdc passes between 10 and 20, current 10A. Assuming VCE (sat) = 1V, VBE…

A:

Q: Consider the BJT transistor circuit in Figure 1. If DC  = 150 and VBE = 0.65V, calculate: Base…

A: Disclaimer:  Since you have asked multipart questions, we will solve the first three subpart for…

Q: A BJT transistor in the on state has Bdc = 10, VBE %3D (sat) = 0.8V, VCE (sat) = 0.6V and R on =…

A:

Q: Given VBE(on) = 0.7 V, B = 100 and, and VcE(sat) = 0.2 V, calculate Is, Ic, VCE and power…

A:

Q: 5. Figure illustrates the minority carrier concentrations along a BJT. We are told that VEB>0 and…

A:

Q: 1. The collector current is 1.2mA when the base current is 24 micro ampere. What is the current…

A: As per the guidelines, we supposed to answer first three part of the question at a time so please…

Q: a) Assume that the transistor in the given circuit of is replaced with one having a βDC = 200.…

A:

Q: Design a four resistor bias network for pnp BJT transistor to give a 9,(200LA, 4V). if B = 100 and…

A: Consider the circuit,

Q: 3) The maximum collector current (IC(max)), taking VCE(sat) as 0 V, is : 4) The power dissipated by…

A:

Q: Is the transistor in the active region? Explain thoroughly. Based on the analysis results, what is…

A: 2-b)   V01=2.5-0.7=1.8VIE=1.8/3.6kΩ=0.5mA≈ICV02=5-3.3kΩ×0.5mA     =3.35V Emitter base junction…

Q: 0.5 mA 200 kn 20 kn 200 2

A: The solution is given below

Q: The BJT transistor with Bdc passes between 10 and 20, current 10A. Assuming VCE (sat) = 1V, VBE…

A: ic sat=10Avce sat=1vvbe sat=1.5vi

Q: Q4/ For the PNP transistor circuit with B=120, VEE = 12 V, VB = 0 V, Vcc = -12 V, and RE = 3 k2,…

A: Solve for Rc

Unijunction Transistor (UJT)

The Unijunction Transistor (UJT) is a three-terminal switching semiconductor device. It contains an n-shaped silicone object bar with a terminal attached to its two ends known as base one and base two. The third terminal is connected to a highly enclosed p-type material attached to the bar section of its length and is known as emitter. As there is only one corrective cross within the device, it is therefore called the 'Unijunction' transistor. The characteristics of the single junction transistor show the wrong resistance if it finds use in resting oscillator circuits for various applications.