Given a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2 , I = 2.5 mA, and the magnetic field is 30 nT (1T = 104 Wb/cm2 ). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobility of the semiconductor sample.

Q: 23) 1- Why is the photonic devices are considered direct semiconductors? Explain 2- Where does the…

A: As per the honor code we are supposed to answer only the first 3 questions. Hence please upload the…

Q: Problem 4. When a positive bias of 0.5 V is applied to the metal side of a Pt-Si junction, the…

A: Known parameters, The intrinsic concentration of Pt-Si, ni=1010 cm-3 The dielectric constant of…

Q: 8.32 A silicon pn junction diode at 7 = 300 K has the following parameters: N, = Na = 106 cm-, T0 =…

A: A silicon PN junction diode at T=300 K has the following parameters: Na=Nd=1016 cm-3 ,…

Q: on of x which must exist in the semiconductor. 4 16 The total current in a semiconductor is constant…

A: Given  Current density J =-10 A/cm2  Concentration of hole p= 1016 cm-3  Concentration of electron…

Q: A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per…

A:

Q: Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information…

A:

Q: Find the current that flows in a silicon bar of 2-cm length having a 30-um^2 cross section area and…

A:

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A: Drift currentIdrift=σ E AIdrift=(ND q μn+NA q μp) E A    A=1 mm2=10-6 m2   E=elcectric…

Q: Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to…

A: The given semiconductor is a homogenously doped n-type. At equilibrium the concentration of the…

Q: Below the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge and…

A: A)Energy band gap of Ge=0.72 eVEnergy band gap of Si=1.1 eVB)Fermi Energy level=Band gap energy2So,…

Q: Consider a bar of silicon in which a hole concentration profile described by P(x) =P,e, is…

A: The conductivity of semiconductor is lies in between conductor and insulator. The band gap of…

Q: At T=300K, the electron concentration of a semiconductor material is n, =10° cm³. The bandgap energy…

A:

Q: a) Why the energy band gap is also known as forbidden band gap? Sketch the energy band diagrams and…

A: According to the question, we need to discuss energy band gap. Also need to discuss the width of the…

Q: A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and…

A: Electric field, E = -1500V/cm Mobility of electrons, µe = 1000 cm2/V.s Mobility of holes, µp = 400…

Q: Problem 4. When a positive bias of 0.5 V is applied to the metal side of a Pt-Si junction, the…

A:

Q: A silicon wafer (n;=1.388×10'6 atoms / m³) is doped with 4.50 × 10" boron atoms/m at 27°c. The…

A:

Q: Consider a p-n junction at room temperature. Doping concentration in the n and p regions is Np =…

A: Given :  KT = 26 mev    NV = 1× 10^19 /cm^3.    NA = 4× 10^17 / cm^3     Efp- EV = position of Fermi…

Q: Q5/ A sample of silicon is uniformly doped with 1016 arsenic atoms per cm-3 and 5 x 1015 boron atoms…

A:

Q: Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is…

A:

Q: For Silicon semiconductor material with band gap energy equals to 0.9 eV, at T=300 K with the Fermi…

A:

Q: 9.A semiconducting crystal with 12 mm long, 5 mm wide and 1 mm thick has a magnetic density of 0.5…

A: 9. From the above question data is as follows: To find Hall coefficient:VH=37 μV=37×10-6 Vt=1…

Q: Consider the semiconductor crystal at 300 K. Where n, = 1.8 x 10 cm. %3D a- In a sample containing…

A: In an intrinsic semiconductor, the electron (n) and hole concentration (p) will be equal and this…

Q: Consider the semiconductor crystal at 300 K. Where n, = 1.8 x 10 cm. a- In a sample containing only…

A: In an intrinsic semiconductor, the electron (n) and the hole (p) concentration will be equal to the…

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A:

Q: In a Si semiconductor sample of 100 um length at 300K the hole concentration as a function of the…

A:

Q: 5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom…

A: In the above question there are mentioned the dopant concentration of doping concentration of the…

Q: A heavily doped n-typed semiconductor has the following data: Hole-electron mobility ratio : 0.4…

A: The conductivity of semiconductor is lies in between conductor and insulator. The conduction in…

Q: Given a Si sample of unknown doping, Hall measurement has been made and the following information…

A: Given a Si sample of unknown doping, Hall measurement has been made and the following information…

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A: The given semiconductor is composite semiconductor because doping is done of both pentavalent…

Q: For a silicon one-sided abrupt junction with NA= 8 x 1019 cm3 and ND- 2 x 1015 cm3, calculate the…

A: Value of intrinsic concentration for silicon at room temperature is always 1010cm-3.Values of…

Q: Consider a semiconductor material of silicon. At 400 K, the electron concentration in the conduction…

A:

Q: what the hole current density in silicon if the hole drift velocity is 106 cm/s and the density of…

A: Here hole current density and total current we need to find out. We have derived the value of these…

Q: Q6) Consider a silicon sample is doped with 1015/cm³ Arsenic(As),then additionally doped with…

A: We will direct formula to calculate conductivity for given semiconductor .

Q: There is a p-type semiconductor box. As the voltage at both ends of the box continued to increase,…

A: P-Type semiconductor That type semiconductor device which containing more number of holes as the…

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A:

Q: 4.32: For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be at…

A: GIVEN: fermi level must be at least 3kT below the donor level in n-type material              fermi…

Q: Q6/Consider n-type silicon at T=300 K doped with arsenic. Determine the maximum doping at which the…

A:

Q: 3. Boron is implanted into an n-type silicon wafer to a depth (i.e., range) of 0.3 um. It is known…

A:

Q: Si sample of unknown doping, Hall measurement has been made and the following information obtained:…

A:

Q: Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to…

A: For the above given data T = 300k  electron concentration = 1015 cm-3 the hole diffusion current…

Q: 5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom…

A: a) aluminium is a trivalent impurities.so when Ge  doped with aluminium makes the semiconductor is a…

Q: 1- Why do we need to know that Moor's law is important for semiconductors fabrication? 2- Density of…

A: 1) Moore's Law:  It states that the number of transistors in a chip will doubles for every two…

Q: 1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm,…

A: "According to the Company's policy, we will provide solution of the first three parts of the…

Q: Consider a silicon pin junction composed of a p-type region, intrinsic region and n-type region. The…

A: The semiconductors are widely used in analog device applications. The semiconductors are intrinsic…

Q: Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A 2.5 x +150mV is…

A: Hall coefficient is calculated as follows:

Q: QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type…

A: Given Na=0Nc=Nv=1.5×1019 cm-3T=400k

Hall Effect Sensors

The hall effect sensor is an electronic device designed to detect the effect of the hall, and converts its findings into electronic data, or opening and closing the circuit, providing a magnetic field measurement, processed by an embedded computer or displayed on a visual connector.